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Lu S Chen, Age 75630 11Th St, New York, NY 10009

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Known as:
Shen L Chen Lushen Chen Luisa Chino
Related to:
Xuan Zhen Chen 64

Lu Chen Phones & Addresses

630 11Th St, New York, NY 10009

335 53Rd St, Brooklyn, NY 11220

Philadelphia, PA

Pennsauken, NJ

Brighton, MA

Mentions for Lu S Chen

Career records & work history

Lawyers & Attorneys

Lu Chen Photo 1

Lu Chen - Lawyer

ISLN:
924302662
Admitted:
2012
Lu Chen Photo 2

Lu Chen - Lawyer

Office:
Fasken Martineau DuMoulin LLP
Specialties:
Banking & Finance
ISLN:
922297281
University:
Heilongjiang University, China, 2003; Seneca College, 2008; Seneca College, 2008

Lu Chen resumes & CV records

Resumes

Lu Chen Photo 42

Lu Chen - Boston, MA

Work:
Cubist Pharmaceuticals Jun 2013 to 2000
Financial Analyst The Marble Collection - Lakeville, MA Jun 2013 to Sep 2013
Full Charge Bookkeeper Charles River Public Internet Center - Waltham, MA Feb 2013 to Apr 2013
VITA Tax Volunteer Wisecorol CPA Firm Feb 2012 to Mar 2012
Auditing Intern
Education:
Bentley University, Graduate School of Business - Waltham, MA Sep 2012
Master of Science in Accountancy Southwestern University Of Finance and Economics 2008 to 2012
Bachelor of Science in Accounting
Skills:
Excel (Pivot Table, Vlookup), PowerPoint, Oracle, GL Wand, Cognos, Adaptive Planning, QuickBooks
Lu Chen Photo 43

Lu Chen - Boston, MA

Education:
Boston University - Boston, MA Jan 2009 to Jan 2011
MFA in Graphic Design
Skills:
Graphic design, Web Design
Lu Chen Photo 44

Lu Chen - Jersey City, NJ

Work:
Terrapinn Jan 2011 to 2000
Conference Manager Global Network of Women Peacebuilders - New York, NY Jul 2010 to Jan 2011
Front Office Ambassador Global Network of Women Peacebuilders - New York, NY Jun 2010 to Jan 2011
Intern Student World Assembly - New York, NY Sep 2009 to May 2010
Advocacy Coordinator NYU Steinhardt School, Department of Teaching and Learning - New York, NY Oct 2008 to May 2010
Project Assistant Chinese National Commission for UNESCO Jul 2007 to Aug 2007
Intern Dongfang Int'l Centre for Educational Exchange, China Scholarship Council Jul 2005 to Aug 2005
Intern
Education:
New York University - New York, NY Jan 2008 to Jan 2010
Master of Arts in International Relations Peking University Jan 2004 to Jan 2008
Bachelor of Economics in International Economics and Trade, and Bachelor of Laws in International Relations and Foreign Affairs
Skills:
Research, Event organization and coordination, Program design/development, Bi-lingual and multi-cultural communication, Microsoft Office suite, FileMaker Pro

Publications & IP owners

Us Patents

Ninety Degree Splitter With At Least Three Windings On A Single Core

US Patent:
6542047, Apr 1, 2003
Filed:
Dec 5, 2000
Appl. No.:
09/729380
Inventors:
Lu Chen - Brooklyn NY
Radha Setty - Staten Island NY
Daxiong Ji - Brooklyn NY
Assignee:
Mini-Circuits - Brooklyn NY
International Classification:
H01P 516
US Classification:
333119, 336170
Abstract:
A 90 degree splitter which covers a wide frequency range of 1500 to 2500 Mhz in a small footprint of only 0. 2 inches by 0. 2 inches. This device does not use any capacitors which greatly simplifies the construction and lowers the cost in comparison to conventional splitters.

Three Way Power Splitter

US Patent:
6965280, Nov 15, 2005
Filed:
May 21, 2004
Appl. No.:
10/850511
Inventors:
Lu Chen - Brooklyn NY, US
International Classification:
H03H007/38
US Classification:
333131, 333119, 333118
Abstract:
A three way power splitter that has a small package size. The three way power splitter includes a multi-layered low temperature co-fired ceramic substrate. An input transformer and three output transformers are attached to the top of the substrate. The transformers have wires that are attached to terminals on the top of the substrate. Three resistors are located on the top surface of the substrate under the transformers. A capacitor is located within the substrate. Terminals are also located on the bottom of the substrate. Several conductive vias extend through the substrate and connect the resistors, the capacitor and the terminals.

High Power Directional Coupler

US Patent:
7049905, May 23, 2006
Filed:
Jul 6, 2004
Appl. No.:
10/884510
Inventors:
Lu Chen - Brooklyn NY, US
Assignee:
Scientific Components Coporation - Brooklyn NY
International Classification:
H01P 3/08
H01P 5/18
US Classification:
333116, 333246
Abstract:
A directional coupler has a multi-layered low temperature co-fired ceramic substrate. A circuit line is located on one of the layers and is connected to an input port and an output port. Another circuit line is located on a different layer and is connected to a forward coupled port and a reverse coupled port. The circuit lines are located close to each other such that they are electromagnetically coupled. Ground planes are located on the top and bottom surfaces of the substrate.

Directional Coupler

US Patent:
7218186, May 15, 2007
Filed:
Mar 29, 2004
Appl. No.:
10/810416
Inventors:
Lu Chen - Brooklyn NY, US
Assignee:
Scientific Components Corporation - Brooklyn NY
International Classification:
H01P 3/08
H01P 5/18
US Classification:
333116, 333246
Abstract:
A directional coupler for low frequencies that is small and can handle high power levels. The directional coupler includes a pair of circuit lines having an input port, an output port, a forward coupled port and a reverse coupled port. The circuit lines are located proximate to each other such that they are electromagnetically coupled. A low pass filter is connected to the forward coupled port. The low pass filter shifts the operating frequency of the directional coupler.

Coupling Flatness Compensated Directional Coupler

US Patent:
2006016, Jul 27, 2006
Filed:
Jan 24, 2005
Appl. No.:
11/040793
Inventors:
Lu Chen - Brooklyn NY, US
International Classification:
H01P 5/18
US Classification:
333116000
Abstract:
A directional coupler that has improved coupling flatness. The directional coupler includes a first, second and third coupler. Each of the couplers has an input port, an output port, a forward coupled port and a reverse coupled port. The forward coupled port of the first coupler is connected to the input port of the second coupler. The reverse coupled port of the first coupler is connected to ground. The output port of the second coupler is connected to the input port of the third coupler. The output port of the third coupler forms a second forward coupled port. The second and third couplers reduce the variation in coupling over a frequency range.

Light Emitting Diode With Enhanced Quantum Efficiency And Method Of Fabrication

US Patent:
2012023, Sep 20, 2012
Filed:
Jul 30, 2010
Appl. No.:
13/387713
Inventors:
Jie Su - Edison NJ, US
Olga Kryliouk - Sunnyvale CA, US
Yuriy Melnik - Santa Clara CA, US
Hidehiro Kojiri - Sunnyvale CA, US
Lu Chen - Sunnyvale CA, US
Tetsuya Ishikawa - Saratoga CA, US
International Classification:
H01L 33/04
C30B 25/02
H01B 1/02
C30B 25/08
US Classification:
257 13, 438 47, 118729, 117 88, 420591, 252512, 257E33008
Abstract:
One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.

Possible Relatives

De X Chen  Deanna M Chen  Daisy C Chen  Deborah L Chen  Danny W Chen  Dennis C Chen  Denny C Chen  Lu Kelley  Lu King  Lu Kramer 

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