Sultan Malik resumes & CV records
Resumes
Maintenance Technician
Work:
Dewa
Maintenance Technician
Maintenance Technician
Sultan Malik
Sultan Malik, Age 674402 Gertrude Dr, Fremont, CA 94536
Sultan Malik Phones & Addresses
Fremont, CA
Sharon, MA
Dorchester, MA
Revere, MA
Lowell, MA
Milford, MA
Mentions for Sultan Malik
Publications & IP owners
Us Patents
Gas Delivery Module
US Patent:
2020034, Oct 29, 2020
Filed:
Jul 10, 2020
Appl. No.:
16/926422
Inventors:
- Santa Clara CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
International Classification:
H01L 21/447
C23C 16/452
H01L 21/67
C23C 16/452
H01L 21/67
Abstract:
The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.
Gas Abatement Apparatus
US Patent:
2020003, Feb 6, 2020
Filed:
Aug 6, 2018
Appl. No.:
16/055929
Inventors:
- Santa Clara CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas NEMANI - Sunnyvale CA, US
Rafika Smati - Santa Clara CA, US
Joseph Ng - Santa Clara CA, US
John O'Hehir - Santa Clara CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas NEMANI - Sunnyvale CA, US
Rafika Smati - Santa Clara CA, US
Joseph Ng - Santa Clara CA, US
John O'Hehir - Santa Clara CA, US
International Classification:
B01D 53/04
H01L 21/673
H01L 21/67
H01L 21/673
H01L 21/67
Abstract:
Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.
Gas Delivery Module
US Patent:
2020003, Jan 30, 2020
Filed:
Jul 12, 2019
Appl. No.:
16/510847
Inventors:
- Santa Clara CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
International Classification:
H01L 21/447
H01L 21/67
C23C 16/452
H01L 21/67
C23C 16/452
Abstract:
The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.
Processing Apparatus
US Patent:
2020003, Jan 30, 2020
Filed:
Jul 12, 2019
Appl. No.:
16/510848
Inventors:
- Santa Clara CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Qiwei LIANG - Fremont CA, US
Sultan MALIK - Sacramento CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
International Classification:
H01L 21/67
F01K 1/00
F01K 1/00
Abstract:
The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A steam delivery module is in fluid communication with the high pressure process chamber and is configured to deliver steam to the process chamber. The steam delivery module includes a boiler and a steam reservoir.
High Pressure Wafer Processing Systems And Related Methods
US Patent:
2019019, Jun 27, 2019
Filed:
Mar 4, 2019
Appl. No.:
16/292289
Inventors:
- Wilmington DE, US
Srinivas D. NEMANI - Sunnyvale CA, US
Adib M. KHAN - Santa Clara CA, US
Venkata Ravishankar KASIBHOTLA - Bangalore, IN
Sultan MALIK - Sacramento CA, US
Sean KANG - San Ramon CA, US
Keith Tatseun WONG - Los Gatos CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Adib M. KHAN - Santa Clara CA, US
Venkata Ravishankar KASIBHOTLA - Bangalore, IN
Sultan MALIK - Sacramento CA, US
Sean KANG - San Ramon CA, US
Keith Tatseun WONG - Los Gatos CA, US
International Classification:
H01L 21/67
C23C 16/52
H01L 21/768
H01L 21/687
H01L 21/324
C23C 16/52
H01L 21/768
H01L 21/687
H01L 21/324
Abstract:
A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.
Gas Delivery System For High Pressure Processing Chamber
US Patent:
2019001, Jan 17, 2019
Filed:
Dec 7, 2017
Appl. No.:
15/835378
Inventors:
- Wilmington DE, US
Qiwei Liang - Fremont CA, US
Sultan Malik - Sacramento CA, US
Keith Tatseun Wong - Los Gatos CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Qiwei Liang - Fremont CA, US
Sultan Malik - Sacramento CA, US
Keith Tatseun Wong - Los Gatos CA, US
Srinivas D. Nemani - Sunnyvale CA, US
International Classification:
C21D 1/773
H01L 21/67
H01L 21/324
H01L 21/311
H01L 21/02
H01L 21/67
H01L 21/324
H01L 21/311
H01L 21/02
Abstract:
A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.
High Pressure Wafer Processing Systems And Related Methods
US Patent:
2018025, Sep 13, 2018
Filed:
Dec 7, 2017
Appl. No.:
15/835356
Inventors:
- Wilmington DE, US
Srinivas D. Nemani - Sunnyvale CA, US
Adib M. Khan - Cupertino CA, US
Venkata Ravishankar Kasibhotla - Bengaluru, IN
Sultan Malik - Sacramento CA, US
Sean Kang - San Ramon CA, US
Keith Tatseun Wong - Los Gatos CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Adib M. Khan - Cupertino CA, US
Venkata Ravishankar Kasibhotla - Bengaluru, IN
Sultan Malik - Sacramento CA, US
Sean Kang - San Ramon CA, US
Keith Tatseun Wong - Los Gatos CA, US
International Classification:
C23C 16/52
H01L 21/687
H01L 21/324
H01L 21/768
H01L 21/67
H01L 21/687
H01L 21/324
H01L 21/768
H01L 21/67
Abstract:
A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.
High Pressure Wafer Processing Systems And Related Methods
US Patent:
2018026, Sep 13, 2018
Filed:
Mar 9, 2018
Appl. No.:
15/917365
Inventors:
- Santa Clara CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Adib KHAN - Cupertino CA, US
Venkata Ravishankar KASIBHOTLA - Bangalore, IN
Sultan MALIK - Sacramento CA, US
Sean S. KANG - San Ramon CA, US
Keith Tatseun WONG - Los Gatos CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Adib KHAN - Cupertino CA, US
Venkata Ravishankar KASIBHOTLA - Bangalore, IN
Sultan MALIK - Sacramento CA, US
Sean S. KANG - San Ramon CA, US
Keith Tatseun WONG - Los Gatos CA, US
International Classification:
H01L 21/67
Abstract:
A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.
NOTICE: You may not use PeopleBackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. PeopleBackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.