Manuel B Madriaga, Age 79Austin, TX

7126700, Oct 24, 2006

Dec 12, 2003

10/735212

Junwei Bao - Fremont CA, US
Vi Vuong - Fremont CA, US
Manuel Madriaga - Santa Clara CA, US
Daniel Prager - Hopewell Junction NY, US

Timbre Technologies, Inc. - Santa Clara CA

G01B 11/02
G01B 11/24

356625, 356601, 702155, 702189

The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.

7372583, May 13, 2008

Apr 12, 2007

11/787025

Wen Jin - Sunnyvale CA, US
Junwei Bao - Palo Alto CA, US
Shifang Li - Pleasanton CA, US
Manuel Madriaga - San Jose CA, US

Tokyo Electron Limited - Tokyo

G01B 11/02
G01B 11/06

356625, 356601, 702179, 702189

A fabrication tool can be controlled using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. After the support vector machine has been trained, a fabrication process is performed using the fabrication tool to fabricate the structure on the wafer. A measured diffraction signal off the structure is obtained.

7417750, Aug 26, 2008

Nov 7, 2006

11/594659

Vi Vuong - Fremont CA, US
Junwei Bao - Palo Alto CA, US
Manuel Madriaga - San Jose CA, US

Tokyo Electron Limited - Tokyo

G01B 11/04
G01B 15/00
G01N 21/88

356636, 3562375, 356394, 702155, 438 16

Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using an angle-resolved spectroscopic scatterometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters, characterize geometries of the first structure, and an azimuth angle parameter, which define the angle between the plane of incidence beam and direction of periodicity of the first or second structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is compared to a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal with the azimuth angle parameter having a value that is about 90 degrees different than the value of the azimuth angle parameter used to generate the first simulated diffraction signal.

7440881, Oct 21, 2008

Aug 2, 2004

10/910018

Daniel Edward Engelhard - Mountain View CA, US
Manuel B. Madriaga - Santa Clara CA, US

Timbre Technologies, Inc. - Santa Clara CA

G06F 17/50
G01V 3/00

703 13, 702 2

A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.

7444196, Oct 28, 2008

Apr 21, 2006

11/408744

Steven Scheer - Austin TX, US
Alan Nolet - San Jose CA, US
Manuel Madriaga - San Jose CA, US

Timbre Technologies, Inc. - Santa Clara CA

G06F 19/00
G01B 11/14
G01R 31/26
H01L 21/66

700109, 700108, 700121, 430311, 430312, 430313, 430315, 430321, 356305, 356326, 356328

A patterned structure in a wafer is created using one or more fabrication treatment processes. The patterned structure has a treated and an untreated portion. One or more diffraction sensitivity enhancement techniques are applied to the structure, the one or more diffraction sensitivity enhancement techniques adjusting one or more properties of the patterned structure to enhance diffraction contrast between the treated portion and untreated portions. A first diffraction signal is measured off an unpatterned structure on the wafer using an optical metrology device. A second diffraction signal is measured off the patterned structure on the wafer using the optical metrology device. One or more diffraction sensitivity enhancement techniques are selected based on comparisons of the first and second diffraction signals.

7480062, Jan 20, 2009

May 25, 2007

11/754225

Shifang Li - Pleasanton CA, US
Sanjay Yedur - Fremont CA, US
Manuel Madriaga - San Jose CA, US

Tokyo Electron Limited - Tokyo

G01B 11/02
G01B 11/06

356625, 356601, 356636, 702 23, 702127, 438 14

Provided is a method of controlling a photolithography cluster or a subsequent fabrication cluster using optical metrology to determine profile parameters of a photomask structure covered with a pellicle. An optical metrology model of the pellicle is developed and integrated with the optical metrology model of the photomask structure. The optical metrology model of the photomask taking into account the optical effects on the illumination and detection beams transmitted through the pellicle and diffracted by the photomask structure. One or more profile parameters of the photomask structure is determined and used to adjust one or more process parameters or equipment settings of a photolithography cluster using the photomask or a subsequent fabrication cluster.

7522295, Apr 21, 2009

Nov 7, 2006

11/594497

Vi Vuong - Fremont CA, US
Junwei Bao - Palo Alto CA, US
Manuel Madriaga - San Jose CA, US

Tokyo Electron Limited - Tokyo

G01B 11/04

356636

Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using a polarized reflectometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters that characterize geometries of the first structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is converted to a converted diffraction signal. The converted diffraction signal is compared to the first simulated diffraction signal or a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison.

7526354, Apr 28, 2009

Jul 10, 2006

11/484484

Manuel Madriaga - San Jose CA, US
Junwei Bao - Palo Alto CA, US
Vi Vuong - Fremont CA, US

Tokyo Electron Limited - Tokyo

G06F 19/00

700 98, 702 81

A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model includes a first fabrication cluster, a metrology cluster, an optical metrology model optimizer, and a real time profile estimator. The first fabrication cluster configured to process a wafer, the wafer having a first patterned and a first unpatterned structure. The first patterned structure has underlying film thicknesses, critical dimension, and profile. The metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster. The metrology cluster is configured to measure diffraction signals off the first patterned and the first unpatterned structure. The metrology model optimizer is configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters.