Mark Itzler resumes & CV records
Resumes
Mark A Itzler, Age 60150 Arreton Rd, Princeton, NJ 08540
Mark Itzler Phones & Addresses
150 Arreton Rd, Princeton Township, NJ 08540 (609) 683-4057
172 Prospect St, Princeton, NJ 08540 (609) 683-4057
Greensboro, NC
Cambridge, MA
Lawrenceville, NJ
West Roxbury, MA
Quincy, MA
150 Arreton Rd, Princeton, NJ 08540 (609) 744-7643
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Mark A Itzler
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Work
Position:
Professional/Technical
Education
Degree:
Graduate or professional degree
Mentions for Mark A Itzler
Publications & IP owners
Us Patents
Back Illuminated Photodiodes
US Patent:
6894322, May 17, 2005
Filed:
Feb 10, 2003
Appl. No.:
10/361233
Inventors:
Steven Kwan - Belle Mead NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Mark Itzler - Princeton NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Mark Itzler - Princeton NJ, US
Assignee:
JDS Uniphase Corporation - San Jose CA
International Classification:
H01L031/0328
US Classification:
257186, 257187, 257188, 257189, 257191, 257190, 257438, 257458
Abstract:
A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SiN. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.
Optical Receiver With High Dynamic Range
US Patent:
7068890, Jun 27, 2006
Filed:
May 19, 2005
Appl. No.:
11/132801
Inventors:
Yakov G. Soskind - Plainsboro NJ, US
Mark Itzler - Princeton NJ, US
Scott Merritt - McLean VA, US
Mark Itzler - Princeton NJ, US
Scott Merritt - McLean VA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
G02B 6/30
G02B 6/26
G02B 6/42
G02B 6/38
G02B 6/36
G02B 6/00
H01L 29/732
G02B 6/26
G02B 6/42
G02B 6/38
G02B 6/36
G02B 6/00
H01L 29/732
US Classification:
385 49, 385 39, 385 70, 385 88, 385 92, 385140, 257184
Abstract:
An optical coupling assembly having an optical receiver that exhibits extended dynamic range, and, more particularly, an optical receiver that is integrated with a Variable Optical Attenuator (VOA) to extend the dynamic range of the receiver.
Apparatus Comprising An Avalanche Photodiode
US Patent:
7378689, May 27, 2008
Filed:
Oct 17, 2005
Appl. No.:
11/251965
Inventors:
Mark Allen Itzler - Princeton NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 29/80
US Classification:
257186, 257438
Abstract:
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
Method For Forming An Avalanche Photodiode
US Patent:
7553734, Jun 30, 2009
Filed:
Oct 17, 2005
Appl. No.:
11/251964
Inventors:
Rafael Ben-Michael - Scotch Plains NJ, US
Mark Allen Itzler - Princeton NJ, US
Mark Allen Itzler - Princeton NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 21/20
US Classification:
438380, 257233, 257E27133
Abstract:
Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a low dark count rate. Some APDs fabricated using these methods have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is substantially minimized and further wherein the device region maintains a substantially uniform gain and breakdown voltage.
Apparatus Comprising An Avalanche Photodiode
US Patent:
7582920, Sep 1, 2009
Filed:
Mar 19, 2008
Appl. No.:
12/051651
Inventors:
Mark Allen Itzler - Princeton NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 21/00
US Classification:
257186, 257438, 438 48
Abstract:
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
Apparatus Comprising A Single Photon Photodetector Having Reduced Afterpulsing And Method Therefor
US Patent:
7626193, Dec 1, 2009
Filed:
Mar 27, 2006
Appl. No.:
11/277562
Inventors:
Mark Allen Itzler - Princeton NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Sabbir Sajjad Rangwala - Flemington NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Sabbir Sajjad Rangwala - Flemington NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 31/058
US Classification:
257 31063, 257E31064, 257108, 257113, 257129, 257146, 257168, 257175, 257186, 257199, 257322, 257467, 257481, 257603, 257431, 257438, 2503361, 2503381, 2503384, 25033903, 250340, 2503411, 250352
Abstract:
A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.
Negative Feedback Avalanche Diode
US Patent:
7719029, May 18, 2010
Filed:
May 17, 2007
Appl. No.:
11/750244
Inventors:
Mark Allen Itzler - Princeton NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 29/8605
US Classification:
257186, 257E31064, 257E31116, 257431, 257199, 257322, 257438, 257481, 257492, 257493, 257551, 257603, 257E31063, 257E29335, 257E21355, 257E21357
Abstract:
A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.
Apparatus Comprising An Avalanche Photodiode
US Patent:
7808015, Oct 5, 2010
Filed:
Mar 19, 2008
Appl. No.:
12/051650
Inventors:
Mark Allen Itzler - Princeton NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Rafael Ben-Michael - Scotch Plains NJ, US
Assignee:
Princeton Lightwave, Inc. - Cranbury NJ
International Classification:
H01L 21/00
US Classification:
257186, 257438
Abstract:
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
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