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Mitra L Taheri, Age 45Baltimore, MD

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Known as:
Micra M Taheri Lenore Taheri Mitra Taheri Mitra
Related to:
Farideh M Taheri 76

Mitra Taheri Phones & Addresses

Baltimore, MD

2060 Lombard St, Philadelphia, PA 19146 (267) 687-8401

San Francisco, CA

Washington, DC

Pittsburgh, PA

Burtonsville, MD

Social networks

Mitra L Taheri

Linkedin

Work

Company: Johns hopkins university Jan 2020 Position: Professor

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Carnegie Mellon University 2001 to 2005 Specialities: Materials Science, Engineering

Skills

Materials Science • Scanning Electron Microscopy • Nanotechnology • Powder X Ray Diffraction • Nanomaterials • Characterization • Electron Microscopy • Thin Films • Afm

Industries

Research

Mentions for Mitra L Taheri

Mitra Taheri resumes & CV records

Resumes

Mitra Taheri Photo 23

Professor

Location:
Baltimore, MD
Industry:
Research
Work:
Johns Hopkins University
Professor Drexel University
Hoeganaes Associate Professor Lawrence Livermore National Laboratory Jul 2006 - Aug 2008
Directorate Postdoctoral Fellow Naval Research Laboratory Aug 2005 - Jul 2006
Nrc Postdoctoral Fellow
Education:
Carnegie Mellon University 2001 - 2005
Doctorates, Doctor of Philosophy, Materials Science, Engineering Carnegie Mellon University 1997 - 2001
Bachelors, Bachelor of Science, Materials Science, Engineering Our Lady of Good Counsel High School 1993 - 1997
Good Counsel High School 1993 - 1997
Skills:
Materials Science, Scanning Electron Microscopy, Nanotechnology, Powder X Ray Diffraction, Nanomaterials, Characterization, Electron Microscopy, Thin Films, Afm

Publications & IP owners

Us Patents

Selective Grain Boundary Engineering

US Patent:
2020002, Jan 23, 2020
Filed:
Feb 1, 2019
Appl. No.:
16/265243
Inventors:
Mitra Lenore Taheri - Philadelphia PA, US
Daniel Scotto D'Antuono - Philadelphia PA, US
Joseph Hsieh - Honey Brook PA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
C22F 1/047
C22C 21/08
C21D 9/46
C21D 8/02
C21D 1/26
C21D 1/84
C22C 21/06
Abstract:
A process for grain boundary engineering of an aluminum alloy of AA5XXX series which includes steps of annealing the aluminum alloy at a first temperature of from about 350 C. to about 450 C.; deforming the annealed aluminum alloy to reduce the thickness by from about 2% to about 20% of the original thickness of the aluminum alloy; heat treating the deformed aluminum alloy at a second temperature from about 450 C. to about 550 C., and optionally sensitizing the heat treated alloy in one or more sensitizing steps. Aluminum alloys of the AA5XXX series treated by the process of the present invention are also provided.

Grain Size Tuning For Radiation Resistance

US Patent:
2020002, Jan 23, 2020
Filed:
Dec 18, 2018
Appl. No.:
16/224302
Inventors:
Mitra Lenore Taheri - Philadelphia PA, US
Greg Vetterick - Seattle WA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
C23C 14/58
C23C 14/16
C23C 14/34
C23C 14/35
C23C 14/54
Abstract:
A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850 C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450 C. to about 800 C. at a rate of temperature increase of from about 2 C./minute to about 30 C./minute; and maintaining the nanocrystalline material at the temperature of from about 450 C. to about 800 C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.

Annealing Process

US Patent:
2019018, Jun 20, 2019
Filed:
Feb 26, 2019
Appl. No.:
16/286043
Inventors:
Mitra Lenore Taheri - Philadelphia PA, US
Daniel Scotto D'Antuono - Philadelphia PA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
C22F 1/047
C22F 1/04
C22C 21/08
Abstract:
An annealing process for treatment of an aluminum alloy of AA5XXX series which comprises steps of annealing the aluminum alloy at a first temperature of from about 350 C. to about 450 C. by a rate of temperature increase from about 0.1 C./s to about 0.5 C./s; and cooling down the annealed aluminum alloy to a temperature below 50 C. Aluminum alloys of the AA5XXX series treated by the annealing process of the present invention are also provided.

Grain Size Tuning For Radiation Resistance

US Patent:
2017000, Jan 5, 2017
Filed:
Dec 22, 2014
Appl. No.:
15/102425
Inventors:
Mitra Lenore Taheri - Philadelphia PA, US
Greg Vetterick - Seattle WA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
C23C 14/58
C23C 14/34
C23C 14/54
C23C 14/35
Abstract:
A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850 C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450 C. to about 800 C. at a rate of temperature increase of from about 2 C./minute to about 30 C./minute; and maintaining the nanocrystalline material at the temperature of from about 450 C. to about 800 C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.

Soft Magnetic Composites For Electric Motors

US Patent:
2016030, Oct 20, 2016
Filed:
Dec 22, 2014
Appl. No.:
15/101056
Inventors:
Mitra Lenore TAHERI - Philadelphia PA, US
Katie Jo SUNDAY - Reinholds PA, US
Steven Richard SPURGEON - Narberth PA, US
Steven Joseph MAY - Philadelphia PA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
H01F 1/33
B22F 9/04
B22F 1/00
B22F 3/24
B22F 1/02
H02K 1/02
B22F 3/02
Abstract:
A soft magnetic composite comprising an iron or iron alloy ferromagnetic material coated with an oxide material. An interface between the ferromagnetic material and the layer of oxide contains antiphase domain boundaries. Two processes for producing a soft magnetic composite are also provided. One process includes depositing an oxide layer onto an iron or iron alloy ferromagnetic material by molecular beam epitaxy at a partial oxygen pressure of from 1×10Torr to 1×10Torr to form a coated composite. The other process includes milling an iron or iron alloy ferromagnetic material powder and an oxide powder by high-energy milling to form a mixture; compacting the mixture and curing in an inert gas atmosphere at a temperature from 500 C. to 1200 C. to form a soft magnetic composite.

Accelerated Failure Test Of Coupled Device Structures Under Direct Current Bias

US Patent:
2016029, Oct 6, 2016
Filed:
Mar 31, 2016
Appl. No.:
15/087187
Inventors:
Hessam Ghassemi - Raleigh NC, US
Andrew C. Lang - Branchburg NJ, US
Mitra L. Taheri - Philadelphia PA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
H01L 21/66
G01R 31/26
H01L 29/205
H01L 29/778
H01L 29/20
Abstract:
A method of conducting an in situ reliability test on a cross-section of a device with layered structure at micron-scale and at least two electrodes. The method includes steps of locating an electron transparent cross-sectional portion of the device in a holder and transmitting a direct current bias voltage to the cross-sectional portion of the device through at least two electrodes of the device, and observing and quantifying the microstructural changes of the device cross-section on the holder. A system for conducting an in situ reliability test on a device with a layered structure at a micron-scale and at least two electrodes is also provided.

Selective Grain Boundary Engineering

US Patent:
2016020, Jul 14, 2016
Filed:
Aug 21, 2014
Appl. No.:
14/910272
Inventors:
Mitra Lenore TAHERI - Philadelphia PA, US
Daniel Scotto D'ANTUONO - Philadelphia PA, US
Joseph HSIEH - Honey Brook PA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
C22F 1/047
C21D 1/84
C21D 8/02
C21D 1/26
C22C 21/08
C21D 9/46
Abstract:
A process for grain boundary engineering of an aluminum alloy of AA5XXX series which includes steps of annealing the aluminum alloy at a first temperature of from about 350 C. to about 450 C.; deforming the annealed aluminum alloy to reduce the thickness by from about 2% to about 20% of the original thickness of the aluminum alloy; heat treating the deformed aluminum alloy at a second temperature from about 450 C. to about 550 C., and optionally sensitizing the heat treated alloy in one or more sensitizing steps. Aluminum alloys of the AA5XXX series treated by the process of the present invention are also provided.

Annealing Process

US Patent:
2016018, Jun 30, 2016
Filed:
Aug 21, 2014
Appl. No.:
14/910269
Inventors:
Mitra Lenore TAHERI - Philadelphia PA, US
Daniel Scotto D'ANTUONO - Philadelphia PA, US
Assignee:
Drexel University - Philadelphia PA
International Classification:
C22F 1/047
C22C 21/08
Abstract:
An annealing process for treatment of an aluminum alloy of AA5XXX series which comprises steps of annealing the aluminum alloy at a first temperature of from about 350 C. to about 450 C. by a rate of temperature increase from about 0.1 C./s to about 0.5 C./s; and cooling down the annealed aluminum alloy to a temperature below 50 C. Aluminum alloys of the AA5XXX series treated by the annealing process of the present invention are also provided.

Possible Relatives

Daniel Taheri  Abdy F Taheri  Hamid R Taheri  Joseph M Taheri  Kevin Taheri  Michael Taheri  Mina N Taheri  Mitra E Paik  Mitra A Singh  Mitra Sigari 

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