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Chang M Park, Age 82Los Angeles, CA

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Known as:
Chang Min Park Park Chan Park Changmin
Related to:
Soon H Park 90

Chang Park Phones & Addresses

Los Angeles, CA

Irvine, CA

Cudahy, CA

North Hollywood, CA

Norwalk, CA

Mentions for Chang M Park

Career records & work history

Medicine Doctors

Chang Park Photo 1

Chang W Park, Los Angeles CA

Specialties:
Acupuncture
Address:
975 S Vermont Ave Suite 201, Los Angeles, CA 90006
(213) 383-2726 (Phone)
Languages:
English

Chang H. Park

Specialties:
Urology
Work:
Chang H Park MD
2405 W 8 St STE 102, Los Angeles, CA 90057
(213) 383-7606 (phone) (213) 383-7697 (fax)
Education:
Medical School
Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea
Graduated: 1960
Conditions:
Erectile Dysfunction (ED), Prostatitis, Urinary Tract Infection (UT), Benign Prostatic Hypertrophy, Calculus of the Urinary System, Male Infertility, Prostate Cancer
Languages:
English, Korean
Description:
Dr. Park graduated from the Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea in 1960. He works in Los Angeles, CA and specializes in Urology. Dr. Park is affiliated with St Vincent Medical Center.
Chang Park Photo 2

Chang H Park

Specialties:
Urology
Surgery
Education:
Yonsei University (1960)
Chang Park Photo 3

Chang Seang Park

Specialties:
Anesthesiology
Internal Medicine
Education:
Catholic University Of Korea (1968)
Chang Park Photo 4

Chang DR Park

Specialties:
Obstetrics & Gynecology
General Practice
Cardiovascular Disease
Education:
Yonsei University (1969)
Chang Park Photo 5

Chang Hwan Park, Los Angeles CA

Specialties:
Urologist
Address:
2405 W 8Th St, Los Angeles, CA 90057
Education:
Yonsei University, College of Medicine - Doctor of Medicine
Montefiore Medical Center-North - Residency - Surgery
Board certifications:
American Board of Urology Certification in Urology

License Records

Chang Soo Park

Licenses:
License #: 0402037575
Category: Professional Engineer License

Chang Soo Park

Licenses:
License #: 71281 - Active
Category: Engineers
Issued Date: May 28, 2010
Effective Date: May 28, 2010
Expiration Date: Feb 28, 2019
Type: Professional Engineer

Publications & IP owners

Us Patents

Three-Dimensional Field-Effect Transistor On Bulk Silicon Substrate

US Patent:
2015005, Feb 26, 2015
Filed:
Aug 22, 2013
Appl. No.:
13/973107
Inventors:
- Irvine CA, US
Chang Seo PARK - Irvine CA, US
Assignee:
Broadcom Corporation - Irvine CA
International Classification:
H01L 29/786
H01L 29/66
US Classification:
257347, 438479
Abstract:
A field-effect transistor (FET) on bulk substrate and a method of fabricating the same is discussed herein. The FET includes a dielectric layer disposed on the bulk substrate and a fin structure and a gate structure disposed on the dielectric layer. The dielectric layer includes alternating first and second dielectric regions. The fin structure includes a channel region interposed between a source region and a drain region. The gate structure is capacitively coupled to the fin structure and positioned between the source region and the drain region. Improved performance characteristics of FET is primarily achieved with the dielectric layer providing electrical isolation of the fin structure from the bulk substrate.

Dielectric Cap Layer For Replacement Gate With Self-Aligned Contact

US Patent:
2014013, May 15, 2014
Filed:
Nov 9, 2012
Appl. No.:
13/672864
Inventors:
- Armonk NY, US
- Grand Cayman KY, US
JUNLI WANG - SLINGERLANDS NY, US
CHANG SEO PARK - IRVINE CA, US
RUILONG XIE - SCHENECTADAY NY, US
Assignee:
GLOBALFOUNDRIES, INC. - GRAND CAYMAN
INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY
International Classification:
H01L 21/283
US Classification:
438586, 257E2119
Abstract:
Embodiments of the present invention provide a method of forming borderless contact for transistors. The method includes forming a sacrificial gate structure embedded in a first dielectric layer, the sacrificial gate structure including a sacrificial gate and a second dielectric layer surrounding a top and sidewalls of the sacrificial gate; removing a portion of the second dielectric layer that is above a top level of the sacrificial gate to create a first opening surrounded directly by the first dielectric layer; removing the sacrificial gate exposed by the removing of the portion of the second dielectric layer to create a second opening surrounded by a remaining portion of the second dielectric layer; filling the second opening with one or more conductive materials to form a gate of a transistor; and filling the first opening with a layer of dielectric material to form a dielectric cap of the gate of the transistor.

Isbn (Books And Publications)

Optical Transmission, Switching, And Subsystems Iv: 5-7 September, 2006, Gwangju, South Korea

Author:
Chang Soo Park
ISBN #:
0819464481

Luther Und Die Franziskaner: Chang Soo Park

Author:
Chang Soo Park
ISBN #:
3860644785

Possible Relatives

Dale L Park  Debbie H Park  Deborah J Park  Aaron W Park  Della Park  Danielle Park  Dennis K Park  Chang M Jung  Chang D Kang  Chang D Kim 

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