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Paul R Markworth, Age 51West Linn, OR

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Known as:
Pual R Markworth
Related to:
Cameron Syersak 27

Paul Markworth Phones & Addresses

Lake Oswego, OR

Santa Clara, CA

1451 NE Orenco Station Pkwy, Hillsboro, OR 97124 (503) 740-5225

4768 Maxwell St, Hillsboro, OR 97123

Beaverton, OR

331 Sherman Ave, Evanston, IL 60202 (847) 864-2890

Cortland, OH

1451 NE Orenco Station Pkwy, Hillsboro, OR 97124

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Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Emails

p***[email protected]

Mentions for Paul R Markworth

Publications & IP owners

Us Patents

Precise Patterning Of High-K Films

US Patent:
2005002, Feb 3, 2005
Filed:
Aug 1, 2003
Appl. No.:
10/632470
Inventors:
Justin Brask - Portland OR, US
Mark Doczy - Beaverton OR, US
Matthew Metz - Hillsboro OR, US
John Barnak - Portland OR, US
Paul Markworth - Hillsboro OR, US
International Classification:
H01L021/302
H01L021/461
US Classification:
438745000, 438751000
Abstract:
A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.

Precise Patterning Of High-K Films

US Patent:
2005011, May 26, 2005
Filed:
Dec 20, 2004
Appl. No.:
11/018015
Inventors:
Justin Brask - Portland OR, US
Mark Doczy - Beaverton OR, US
Matthew Metz - Hillsboro OR, US
John Barnak - Portland OR, US
Paul Markworth - Hillsboro OR, US
International Classification:
H01L021/8238
H01L029/76
US Classification:
257314000
Abstract:
A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.

Possible Relatives

Doug E Markworth  James R Markworth  John C Markworth  Paul L Johnson  Paul C Stanbrough  Paul S Stander  Paul W Standish  Paul S Standley  Paul A Johnston  Paul S Stanfield 

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