Paul C Wickboldt, Age 6231 Greenway Dr, Walnut Creek, CA 94596

6436739, Aug 20, 2002

Apr 27, 2000

09/560058

Paul Wickboldt - Walnut Creek CA
Albert R. Ellingboe - Fremont CA
Steven D. Theiss - Woodbury MN
Patrick M. Smith - San Ramon CA

The Regents of the University of California - Oakland CA

H01L 2184

438149, 438151, 438166

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N , between the plastic substrate and the cooling chucks.

6642085, Nov 4, 2003

Nov 3, 2000

09/705484

Jesse D. Wolfe - Fairfield CA
Steven D. Theiss - Woodbury MN
Paul G. Carey - Mountain View CA
Patrick M. Smith - San Ramon CA
Paul Wickboldt - Walnut Creek CA

The Regents of the University of California - Oakland CA

H01L 2100

438149, 438166

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

7112846, Sep 26, 2006

Jul 16, 2003

10/621875

Jesse D. Wolfe - Fairfield CA, US
Steven D. Theiss - Woodbury MN, US
Paul G. Carey - Mountain View CA, US
Patrick M. Smith - San Ramon CA, US
Paul Wickboldt - Walnut Creek CA, US

The Regents of the University of California - Oakland CA

H01L 27/01

257347, 438149

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

RE39988, Jan 1, 2008

Jun 29, 2001

10/768656

Paul Wickboldt - Walnut Creek CA, US
Paul G. Carey - Mountain View CA, US
Patrick M. Smith - San Jose CA, US
Albert R. Ellingboe - Malahide, IE

The Regents of the University of California - Oakland CA

H01L 21/26
H01L 21/42
H01L 21/22
H01L 21/38

438535, 438557, 438558

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

7799666, Sep 21, 2010

Jul 27, 2009

12/509621

Nicholas A. Doudoumopoulos - Garrett Park MD, US
C. Paul Christensen - Tracys Landing MD, US
Paul Wickboldt - Walnut Creek CA, US

Potomac Photonics, Inc. - Lanham MD

H01L 21/42
H01L 21/26
H01L 21/38

438535, 438487, 438513, 438558, 438795, 257E21347, 257E21349

A method utilizing spatially selective laser doping for irradiating predetermined portions of a substrate of a semiconductor material is disclosed. Dopants are deposited onto the surface of a substrate. A pulsed, visible beam is directed to and preferentially absorbed by the substrate only in those regions requiring doping. Spatial modes of the incoherent beam are overlapped and averaged, providing uniform irradiation requiring fewer laser shots. The beam is then focused to the predetermined locations of the substrate for implantation or activation of the dopants. The method provides for scanning and focusing of the beam across the substrate surface, and irradiation of multiple locations using a plurality of beams. The spatial selectivity, combined with visible laser wavelengths, provides greater efficiency in doping only desired substrate regions, while reducing the amount of irradiation required. Savings in cost and manufacturing throughput can be achieved, particularly with respect to doping poly-crystalline silicon.

7964453, Jun 21, 2011

May 15, 2009

12/453571

Nicholas Doudoumopoulos - Garrett Park MD, US
Paul Christensen - Tracys Landing MD, US
Paul Wickboldt - Walnut Creek CA, US

Potomac Photonics, Inc. - Lanham MD

H01L 21/00
H01L 21/84
H01L 21/26
H01L 21/42
H01L 21/324

438150, 438149, 438166, 438795

The manufacturing methodology to produce polycrystalline silicon in time and cost efficient manner uses a spatially selective crystallization approach to greatly reduce the amount of energy delivered to the work surface. The amorphous silicon film is subjected to laser radiation substantially exclusively at localized areas where TFTs are to be formed. The source of radiation is a copper vapor laser which produces a highly stable radiation in a visible spectrum with an energy sufficient to convert amorphous silicon into polysilicon in 1-3 shots. The optic system delivers the homogenized, conditioned and focused laser beam to the area of interest in a controlled manner. Single or multi-laser beam arrangements, as well as different shapes and sizes of laser beam spots are contemplated.

8357242, Jan 22, 2013

Apr 28, 2008

12/111126

Russell F. Jewett - Charlotte NC, US
Steven F. Pugh - Charlotte NC, US
Paul Wickboldt - Walnut Creek CA, US

C30B 23/00
C30B 25/00
C30B 28/12
C30B 28/14

117 88, 117 84, 117 91, 117 92

Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.

2003013, Jul 17, 2003

Jan 14, 2002

10/047782

Paul Wickboldt - Walnut Creek CA, US
Dan Toet - Mountain View CA, US
Wonsuk Chung - Ithaca NY, US

B32B009/04

428/411100, 428/412000, 428/480000

A method of creating a highly conductive transparent layer on a substrate without subjecting the substrate to high temperatures is disclosed. Pulsed laser energy of a wavelength and energy fluence within a selected range is used to crystallize a selected amorphous material using a low number of pulses (optimally as few as one) to form highly electrically conductive thin films that are optically transparent at visible wavelengths. This method does not subject the substrate to sustained higher temperatures and accordingly is particularly suitable for making transparent conductive thin film structures on substrates such as plastic that do not tolerate sustained higher processing temperatures. The disclosed method may also be useful in manufacturing processes in which the substrate is composed of a material (such as glass, for example) that is itself heat tolerant, but in which at the time of creation of the conductive layer is a part of a structure containing a material that does not withstand high temperatures, such as a low temperature plastic or other polymer. A thermal barrier comprised of an oxide, nitride or polymer material may be deposited on the substrate before the precursor material to help insulate the substrate from the thermal effects of the energy directed at the precursor material.