Mark O Neisser, Age 70Albany, NY

6800415, Oct 5, 2004

Sep 28, 2001

09/966958

Ping-Hung Lu - Bridgewater NJ
Mark O. Neisser - Three Bridges NJ
Ralph R. Dammel - Flemington NJ
Hengpeng Wu - Hillsborough NJ

Clariant Finance (BVI) Ltd - Tortola

G03C 173

4302701, 430325, 430328, 430905, 430909, 430910, 430914, 430921, 430927

The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

6844131, Jan 18, 2005

Jan 9, 2002

10/042532

Joseph E. Oberlander - Phillipsburg NJ, US
Ralph R. Dammel - Flemington NJ, US
Shuji Ding-Lee - Branchburg NJ, US
Mark O. Neisser - Whitehouse Station NJ, US
Medhat A. Toukhy - Flemington NJ, US

Clariant Finance (BVI) Limited - Tortola

G03F 7004

4302701, 4302711, 430905

The present invention relates to a novel absorbing, photoimageable and aqueous developable positive-working antireflective coating composition comprising a photoacid generator and a polymer comprising at least one unit with an acid labile group and at least one unit with an absorbing chromophore. The invention further relates to a process for using such a composition. The present invention also relates to a novel absorbing, photoimageable and aqueous alkali developable positive-working antireflective coating composition comprising a polymer comprising at least one unit with an acid labile group, a dye and a photoacid generator. The invention further relates to a process for using such a composition. The invention also relates to a novel process for forming a positive image with a positive photoresist and a novel photoimageable and aqueous developable positive-working antireflective coating composition, where the antireflective coating comprises a polymer comprising an acid labile group. The invention further relates to such a composition.

7070914, Jul 4, 2006

Jan 9, 2002

10/042878

Mark O. Neisser - Whitehouse Station NJ, US
Joseph E. Oberlander - Phillipsburg NJ, US
Medhat A. Toukhy - Flemington NJ, US
Raj Sakamuri - Sharon MA, US
Shuji Ding-Lee - Branchburg NJ, US

AZ Electronic Materials USA Corp. - Somerville NJ

G03F 7/00

430322, 430290, 430311, 430313, 430950

Disclosed is a process for forming an image on a substrate, comprising the steps of: (a) coating on the substrate a first layer of a radiation sensitive, antireflective composition; (b) coating a second layer of a photoresist composition onto the first layer of the antireflective composition; (c) selectively exposing the coated substrate from step (b) to actinic radiation; and (d) developing the exposed coated substrate from step (c) to form an image; wherein both the photoresist composition and the antireflective composition are exposed in step (c); both are developed in step (d) using a single developer; wherein the antireflective composition of step (a) is a first minimum bottom antireflective coating (B. A. R. C. ) composition, having a solids content of up to about 8% solids, and a maximum coating thickness of the coated substrate of.

7081511, Jul 25, 2006

Apr 5, 2004

10/817987

Hengpeng Wu - Hillsborough NJ, US
Jianhui Shan - Pennington NJ, US
Shuji Sue Ding-Lee - Branchburg NJ, US
Eleazor B. Gonzalez - Bloomfield NJ, US
Mark O. Neisser - Whitehouse Station NJ, US

AZ Electronic Materials USA Corp. - Somerville NJ

C08G 63/00

528272, 4284111, 428480, 525480, 528271

The present invention relates to a process for making a polyester where a dianhydride is reacted with a diol. The resulting polyester can be further reacted with a compound selected from aromatic oxides, aliphatic oxides, alkylene carbonates, alcohols, and mixtures thereof.

7247419, Jul 24, 2007

Apr 11, 2005

11/103134

Chunwei Chen - Piscataway NJ, US
Ping-Hung Lu - Bridgewater NJ, US
Hong Zhuang - Raritan NJ, US
Mark Neisser - Whitehouse Station NJ, US

AZ Electronic Materials USA Corp. - Somerville NJ

G03C 1/00
G03F 7/004

4302811, 4302701, 4302861, 4302871, 430905

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.

7264913, Sep 4, 2007

Nov 21, 2002

10/301462

Hengpeng Wu - Hillsborough NJ, US
Shuji Ding-Lee - Branchburg NJ, US
Zhong Xiang - Somerset NJ, US
Joseph E. Oberlander - Phillipsburg NJ, US
Mark O. Neisser - Whitehouse Station NJ, US
Eleazar Gonzalez - Bloomfield NJ, US
Jainhui Shan - Pennington NJ, US

AZ Electronic Materials USA Corp. - Somerville NJ

G03C 1/825
G03C 1/74
G03F 7/20
G03F 7/30
G03F 7/36

4302701, 4302711, 430325, 430326, 430908, 430914, 430919, 430921, 430330

The present invention relates to a novel antireflective coating composition comprising a polymer, a crosslinking agent and an acid generator. The present invention further relates to a process for using the novel composition, particularly at 193 nm. The polymer of the present invention contains at least one unit selected from structures 1, 2 and 3,.

7524606, Apr 28, 2009

Apr 11, 2005

11/103093

Chunwei Chen - Piscataway NJ, US
Ping-Hung Lu - Bridgewater NJ, US
Hong Zhuang - Raritan NJ, US
Mark Neisser - Whitehouse Station NJ, US

AZ Electronic Materials USA Corp. - Somerville NJ

G03F 7/00
G03F 7/004

4302701, 4302811, 430905, 430913, 430917, 430950

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.

7553905, Jun 30, 2009

Oct 31, 2005

11/262639

David J. Abdallah - Bernardsville NJ, US
Jian Yin - Bridgewater NJ, US
Mark O. Neisser - Whitehouse Station NJ, US

AZ Electronic Materials USA Corp. - Somerville NJ

G03F 7/11
C08K 5/07

525154, 4302711, 438952

Novel self-crosslinking polymers are provided and which are useful in antireflective coatings to reduce outgassing.