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Peter J Hesketh, Age 661678 N Pelham Rd NE, Atlanta, GA 30324

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Known as:
Peter Julian Hesketh Petr Hesketh Hesketh Pj

Peter Hesketh Phones & Addresses

1678 N Pelham Rd NE, Atlanta, GA 30324 (404) 872-0645

1678 Pelham St, Atlanta, GA 30324 (404) 872-0645

378 8Th St NE, Atlanta, GA 30309

224 Laflin St, Chicago, IL 60607 (847) 733-0272

Albuquerque, NM

San Francisco, CA

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Mentions for Peter J Hesketh

Peter Hesketh resumes & CV records

Resumes

Peter Hesketh Photo 25

Professor

Location:
Atlanta, GA
Industry:
Higher Education
Work:
University of Illinois at Chicago Aug 1990 - Dec 2000
Assistant and Associate Professor Georgia Institute of Technology Aug 1990 - Dec 2000
Professor Sri International Jan 1987 - Jul 1989
Research Engineer
Education:
University of Pennsylvania 1981 - 1986
Doctorates, Doctor of Philosophy, Electrical Engineering, Philosophy University of Leeds 1976 - 1979
Bachelors, Bachelor of Science, Electronics Engineering
Skills:
Higher Education, University Teaching, Science, Teaching, Student Development, Research, Mathematical Modeling, Simulations, Theory, Physics, Nanotechnology
Peter Hesketh Photo 26

Peter Hesketh

Publications & IP owners

Wikipedia

Peter Hesketh Photo 27

Peter Heskethfleetwood

Sir Peter Hesketh-Fleetwood, 1st Baronet, (9 May 1801 12 April 1866) was an English landowner, developer and Member of Parliament, who founded the town of

Us Patents

Pin Array Assembly And Method Of Manufacture

US Patent:
6455352, Sep 24, 2002
Filed:
Sep 1, 2000
Appl. No.:
09/653672
Inventors:
Joel Pikarsky - Chicago IL
Peter Hesketh - Atlanta GA
Gennadiy Yershov - Hinsdale IL
Assignee:
The University of Chicago - Chicago IL
International Classification:
H01L 2144
US Classification:
438109, 257 48, 438 14, 438 50, 422100
Abstract:
An improved pin array assembly and method of manufacture of the pin array assembly are provided. A pin array assembly includes a single crystal silicon wafer. The single crystal silicon wafer is formed to define a base and an array of pins. Each of the pins has a shaft and a tip surface. The pin shaft is hydrophobic and the pin tip surface is hydrophilic. The method of manufacture of the pin array assembly includes the steps of forming an initial shape of a single crystal silicon wafer to define a base and an array of pins. The initial shape of a single crystal silicon wafer is etched and the array of pins is polished. The step of forming an initial shape of a single crystal silicon wafer to define a base and an array of pins includes mechanically sawing the single crystal silicon wafer to define a base and an array of pins. Chemical treatment of the pins is performed to make the shaft of the pins hydrophobic and to make the pin tip surfaces hydrophilic.

Porous Gas Sensors And Method Of Preparation Thereof

US Patent:
6673644, Jan 6, 2004
Filed:
Oct 10, 2002
Appl. No.:
10/268860
Inventors:
James L. Gole - Atlanta GA
Lenward T. Seals - Atlanta GA
Peter J. Hesketh - Atlanta GA
Assignee:
Georgia Tech Research Corporation - Atlanta GA
International Classification:
H01L 2100
US Classification:
438 49, 438 48, 257252, 257253, 257414, 73 2322, 73 3106
Abstract:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Electrostatic Drive For Accelerometer

US Patent:
6745627, Jun 8, 2004
Filed:
May 21, 1996
Appl. No.:
08/651927
Inventors:
James R. Woodruff - Redmond WA
Peter J. Hesketh - Chicago IL
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
G01P 1510
US Classification:
7351429
Abstract:
A vibratory transducer ( ) for an accelerometer ( ) having a pair of parallel beams ( ) with first and second fixed end portions, and a pair of electrodes ( ) positioned adjacent to the beams for generating an electrostatic force to transversely vibrate the beams at a resonant frequency. The vibration frequency of the beam is generally related to axial (i. e. , compression or tension) forces applied to either one of the fixed ends of the beam so that the magnitude of the force applied can be measured by changes in the vibration frequency. The electrodes and the beams each have a plurality of fingers ( ) extending laterally outward so that the beam fingers and the electrode fingers are intermeshed with each other. The intermeshed fingers reduce the transducers sensitivity to changes in applied voltage, thereby increasing the accuracy of the frequency signal. In addition, the intermeshed fingers enable the transducer to operate effectively at pressure levels substantially above vacuum to permit gas damping of the proof mass.

Porous Gas Sensors And Method Of Preparation Thereof

US Patent:
6893892, May 17, 2005
Filed:
Aug 1, 2003
Appl. No.:
10/633259
Inventors:
James L. Gole - Atlanta GA, US
Lenward T. Seals - Atlanta GA, US
Peter J. Hesketh - Atlanta GA, US
Assignee:
Georgia Tech Research Corp. - Atlanta GA
International Classification:
H01L021/00
US Classification:
438 48, 438 49
Abstract:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Porous Gas Sensors And Method Of Preparation Thereof

US Patent:
7141859, Nov 28, 2006
Filed:
Mar 30, 2005
Appl. No.:
11/094584
Inventors:
John DeBoer - Decatur GA, US
Stephen Edward Lewis - Atlanta GA, US
Peter Hesketh - Atlanta GA, US
James Gole - Atlanta GA, US
Assignee:
Georgia Tech Research Corporation - Atlanta GA
International Classification:
H01L 27/14
US Classification:
257414, 257427, 257423
Abstract:
Devices including conductometric porous silicon gas sensors, methods of fabricating conductometric porous silicon gas sensors, methods of selecting a device, methods of detecting a concentration of a gas, and methods of analyzing data.

Miniature Optically Coupled Electrically Isolated Ultrasensitive Dynamic Pressure Detector

US Patent:
7392707, Jul 1, 2008
Filed:
Feb 19, 2004
Appl. No.:
10/546966
Inventors:
Lid B. Wong - San Diego CA, US
Hua Mao - San Diego CA, US
Donovan B. Yeates - Chicago IL, US
Peter Hesketh - Atlanta GA, US
Assignee:
BioTechPlex Corporation - San Marcos CA
International Classification:
G01L 7/08
US Classification:
73715
Abstract:
A system for monitoring low dynamic pressures in confined spaces, such system comprising a catheter, a multilayered corrugated membrane of diameter less than 2 mm with a reflective inner layer mounted within said catheter; a set of optical fibers comprising one or more illuminating fibers and two or more detecting fibers which are contained within said catheter and whose ends are set at differing distances from the membrane; an illuminating system coupled to said illuminating fibers; and a detection system coupled to said illuminating fibers.

Single Substrate Electromagnetic Actuator

US Patent:
7474180, Jan 6, 2009
Filed:
Oct 31, 2003
Appl. No.:
10/699210
Inventors:
Jemmy Sutanto Bintoro - Atlanta GA, US
Peter J. Hesketh - Atlanta GA, US
Assignee:
Georgia Tech Research Corp. - Atlanta GA
International Classification:
H01H 51/22
US Classification:
335 78, 200181
Abstract:
A microvalve which utilizes a low temperature (

Apparatus For Fluid Storage And Delivery At A Substantially Constant Pressure

US Patent:
7481337, Jan 27, 2009
Filed:
Aug 19, 2004
Appl. No.:
10/922015
Inventors:
Rajesh Luharuka - Atlanta GA, US
Chi-Fu Wu - Atlanta GA, US
Peter Hesketh - Atlanta GA, US
Assignee:
Georgia Tech Research Corporation - Atlanta GA
International Classification:
F04F 11/00
US Classification:
222386, 222 55, 417471, 417472
Abstract:
Microfluidic pumps, methods of fabrication thereof, and methods of use thereof, as well as method of pumping a fluid, are disclosed.

Possible Relatives

David P Hesketh  James P Hesketh  Katherine Hesketh  Laurie A Hesketh  Nancy J Hesketh  Steve M Hesketh  Thomas F Hesketh  Peter D Stamps  Peter J Standish  Peter G Johnston 

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