Peter Paul Kirchner, Age 86Midvale, NJ

4860066, Aug 22, 1989

Jan 8, 1987

7/001472

Peter D. Kirchner - Garrison NY
Ronald F. Marks - Ossining NY
George D. Pettit - Mahopac NY
Jerry M. Woodall - Bedford Hills NY
Steven L. Wright - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 29267
H01L 3100

357 16

An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap>1 electron volt in a layer between 20 and 200 Angstroms thick. A GaAs covered by GaAlAs converter with a 100 Angstrom Si layer over the GaAlAs is illustrated.

4757369, Jul 12, 1988

Jun 10, 1987

7/060700

Thomas N. Jackson - Peekskill NY
Peter D. Kirchner - Garrison NY
George D. Pettit - Mahopac NY
Richard F. Rutz - Cold Spring NY
Jerry M. Woodall - Bedford Hills NY

International Business Machines Corporation - Armonk NY

H01L 29167
H01L 2348
H01L 29161
H01L 2962

357 63

A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.

5764217, Jun 9, 1998

Sep 10, 1996

8/716668

Paul Borrel - Peekskill NY
Peter Daniel Kirchner - Putnam Valley NY
James Sargent Lipscomb - Yorktown Heights NY
Jai Prakash Menon - Peekskill NY
Jaroslaw Roman Rossignac - Ossining NY
Robert Howard Wolfe - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

G09G 500
G06F 3033

345156

A graphics processing and display system includes a coordinate sensing system for determining position and orientation of a view point reference with respect to a schematic representation of at least one three-dimensional object; a view point controller for controlling a display view point according to the determined position and orientation of the view point reference with respect to the schematic representation; and a display processor for generating pixel data representing a two-dimensional rendering of the at least one three-dimensional object according to the graphics data and display view point, wherein the two-dimensional rendering is different from the schematic representation, and wherein the pixel data generated by the display processor is output for display on a display device. Advantageously, the system of the present invention is efficient and easier to use than prior art graphics processing and display systems because the user is provided the ability to control the display view point according to the position and orientation of the view point reference with respect to the schematic representation of the displayed object.

5021365, Jun 4, 1991

Mar 13, 1989

7/322583

Peter D. Kirchner - Garrison NY
Alan C. Warren - Peekskill NY
Jerry M. Woodall - Bedford Hills NY
Steven L. Wright - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 2100
H01L 2102
H01L 21306
H01L 2978

437237

Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

4583110, Apr 15, 1986

Jun 14, 1984

6/620591

Thomas N. Jackson - Peekskill NY
Peter D. Kirchner - Garrison NY
George D. Pettit - Mahopac NY
Jerry M. P. Woodall - Bedford Hills NY

International Business Machines Corporation - Armonk NY

H01L 2348
H01L 29167

357 65

A 10. sup. -6 ohm cm. sup. 2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5. times. 10. sup. 19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.

4550047, Oct 29, 1985

Jun 6, 1983

6/501571

Thomas N. Jackson - Peekskill NY
Peter D. Kirchner - Crompond NY
George D. Pettit - Mahopac NY
James J. Rosenberg - Bronx NY
Jerry M. Woodall - Bedford Hills NY
Steven L. Wright - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

B32B 310
C30B 2304

428136

A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.

4843450, Jun 27, 1989

Jun 16, 1986

6/874738

Peter D. Kirchner - Garrison NY
Alan C. Warren - Peekskill NY
Jerry M. Woodall - Bedford Hills NY
Steven L. Wright - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

H01L 2978

357 52

Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

4426237, Jan 17, 1984

Oct 13, 1981

6/311091

John L. Freeouf - Peekskill NY
Peter D. Kirchner - State College PA
George D. Pettit - Mahopac NY
Jerry M. Woodall - Bedford Hills NY

International Business Machines Corporation - Armonk NY

H01L 21203
H01L 21363

148175

When growing GaAs by molecular beam epitaxy (MBE), a typical related reaction acts to affix Ga. sub. 2 O. sub. 3 to the growth surface and hence incorporates such oxide contaminants in the epitaxial layer as it is grown. Such contaminants may yield crystals of poor electrical and optical properties. When Al is added to the Ga source crucible, the Ga. sub. 2 O flux is reduced substantially thereby suppressing the formation of such oxide contaminants and remove a serious constraint to MBE growth. When doping GaAs with Mg to form a p-type GaAs layer, unity Mg doping efficiency is achieved by including 0. 1% Al in the Ga effusion cell. Such an inclusion of Al improves the Mg doping efficiency by suppressing the formation of MgO, and allows MBE growth at lower substrate temperatures and at higher growth rates.