Peter Adam Newman, Age 657765 Yardley Dr UNIT E215, Tamarac, FL 33321

2003012, Jun 26, 2003

Dec 23, 2002

10/326120

Peter Newman - Brooklyn NY, US

G06F017/60

705/036000

The present invention provides systems and methods for electronic underwriting of new offerings of securities in the primary market for municipalities, institutions and corporations in accordance with U.S. securities laws and regulations. The system also provides a method for those issuers to electronically disseminate annual financial information on existing securities in the secondary market to information repositories. The user can fulfill disclosure requirements for a new offering of securities by completing various forms stored on the system, including the prospectus, closing memorandum, legal opinion and purchase contract. The issuer can fulfill its disclosure obligations for existing offerings of securities by completing various forms, including secondary market disclosure forms, material events notices and financial reports such as annual reports and earnings reports. After completing the forms, the user can disseminate the information electronically to information repositories.

5898210, Apr 27, 1999

Jun 14, 1996

8/665160

Weiyu Han - Edison NJ
Peter G. Newman - Barnegat NJ

The United States of America as represented by the Secretary of the Army - Washington DC

H01L 27095

257471

A Schottky diode having a series of stacked layers starting with a conventional substrate having a semi-insulating GaAs layer and an un-doped GaAs buffer layer. An n-type Si--GaAs channel layer is grown on the GaAs buffer layer. A low-temperature-grown GaAs barrier layer covers the center portion of the upper surface of the n-type channel layer. The Schottky diode comprises two terminals. One diode terminal comprises a ohmic contact deposited on the upper surface of the channel layer. This ohmic contact, which is ring-shaped, encircles the barrier layer. The other diode terminal includes a metal layer that forms a Schottky contact with the upper surface of the barrier layer. The Ga-to-As ratio in the low-temperature-grown GaAs barrier layer is adjusted so that the barrier layer contains a sufficient number of free electrons to support current flow for bias voltages above the Schottky barrier height. Under reverse bias, the barrier layer acts as an insulator, preventing diode breakdown at relatively high reverse bias voltages.