Philip A Trask549 Swarthmore Ave, Pacific Palisades, CA 90272

5827775, Oct 27, 1998

Nov 12, 1997

8/968378

Robert S. Miles - Monrovia CA
Philip A. Trask - Laguna Hills CA
Vincent A. Pillai - Irvine CA

Raytheon Comapny - Lexington MA

H01L 2128

438622

Phase mask laser machining procedures for fabricating high density fine pattern feature electrical interconnection structures. Conductor patterns are fabricated using a phase mask laser patterned dielectric layer as a conductor wet etch masking layer, or by subtractively removing metal using holographic phase mask laser micromachining. In accordance with the present invention, a substrate is provided, a first layer of dielectric material is formed on the substrate, a metal layer is formed on the first layer of dielectric material, and a second layer of dielectric material is then formed on the metal layer. A phase mask is disposed above the second layer of dielectric material that has a predefined phase pattern therein defining a metal conductor pattern that corresponds to an interconnect structure. The second layer of dielectric material is then processed using the phase mask to form the interconnect structure. In a first procedure, the second layer of dielectric material is irradiated through the phase mask using laser energy to remove portions of the second layer of dielectric material and expose the metal layer to define the metal conductor pattern and to provide a dielectric etch mask.

5691245, Nov 25, 1997

Oct 28, 1996

8/738558

Gabriel G. Bakhit - Huntington Beach CA
Vincent A. Pillai - Irvine CA
George Averkiou - Upland CA
Philip A. Trask - Laguna Hills CA

HE Holdings, Inc. - Los Angeles CA

H01L 2160

437209

Methods of forming two-sided high density multilayer interconnect (HDMI) structures on a relatively large carrier and subsequently releasing and removing one or more structures to provide useable flexible interconnects or decals. In general, a carrier is provided and a release layer is formed on the carrier. Flexible high density multilayer interconnect structures are fabricated on the release layer. The release layer is processed to release and remove one or more flexible HDMI structures from the carrier. The carrier may be an ultraviolet transparent substrate, such as quartz, for example, and the release layer may be a polyimide layer. The HDMI structures are released by irradiating the release layer through the transparent carrier using ultraviolet radiation from an ultraviolet radiation source. Alternatively, a silicon carrier may be used that has a metal or silicon dioxide release layer formed thereon. The HDMI structures are released from the metal or silicon dioxide release layer by using wet etching procedures.

5840622, Nov 24, 1998

Aug 27, 1996

8/703854

Robert S. Miles - Monrovia CA
Philip A. Trask - Laguna Hills CA
Vincent A. Pillai - Irvine CA

Raytheon Company - Lexington MA

H01L 2128

438622

Phase mask laser machining procedures for fabricating high density fine pattern feature electrical interconnection structures. Conductor patterns are fabricated using a phase mask laser patterned dielectric layer as a conductor wet etch masking layer, or by subtractively removing metal using holographic phase mask laser micromachining. In accordance with the present invention, a substrate is provided, a first layer of dielectric material is formed on the substrate, a metal layer is formed on the first layer of dielectric material, and a second layer of dielectric material is then formed on the metal layer. A phase mask is disposed above the second layer of dielectric material that has a predefined phase pattern therein defining a metal conductor pattern that corresponds to an interconnect structure. The second layer of dielectric material is then processed using the phase mask to form the interconnect structure. In a first procedure, the second layer of dielectric material is irradiated through the phase mask using laser energy to remove portions of the second layer of dielectric material and expose the metal layer to define the metal conductor pattern and to provide a dielectric etch mask.