Rafael Ignacio Aldaz, Age 484959 Blackbird Way, Pleasanton, CA 94566

7732231, Jun 8, 2010

Jun 3, 2009

12/477222

Rafael I. Aldaz - Pleasanton CA, US
James G. Neff - Felton CA, US

Philips Lumileds Lighting Company, LLC - San Jose CA
Koninklijke Philips Electronics N.V. - Eindhoven

H01L 21/20

438 22, 438 26, 438692

A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A portion of the light emitting layer and the p-type region are removed to expose a portion of the n-type region. A first metal contact is formed on an exposed portion of the n-type region and a second metal contact is formed on a remaining portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A surface of the device is then planarized by removing a portion of at least one of the first metal contact, the second metal contact, and the dielectric material.

7989824, Aug 2, 2011

Apr 23, 2010

12/766221

Rafael I. Aldaz - Pleasanton CA, US
James G. Neff - Felton CA, US

Koninklijke Philips Electronics N.V. - Eindhoven
Philips Lumileds Lighting Company, LLC - San Jose CA

H01L 33/38

257 91, 257E3362

A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material.

8154042, Apr 10, 2012

Apr 29, 2010

12/770550

Rafael I. Aldaz - Pleasanton CA, US
Aurelien J. F. David - San Francisco CA, US

Koninklijke Philips Electronics N V - Eindhoven
Philips Lumileds Lighting Company, LLC - San Jose CA

H01L 33/60

257 98, 257 99, 257E33068

A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.

8168998, May 1, 2012

Jun 9, 2009

12/481021

Aurelien J. David - Palo Alto CA, US
Rafael I. Aldaz - Pleasanton CA, US
Mark Butterworth - Santa Clara CA, US
Serge J. Bierhuizen - Santa Rosa CA, US

Koninklijke Philips Electronics N.V. - Eindhoven
Philips Lumileds Lighting Company, LLC - San Jose CA

H01L 27/15

257100, 257 95, 257 98, 257 99, 257E33001, 438 26, 438 27, 313502, 313512

A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

8415656, Apr 9, 2013

Jan 12, 2012

13/348736

Rafael I. Aldaz - Pleasanton CA, US
Aurelien J. F. David - San Francisco CA, US

Koninklijke Philips Electronics N.V. - Eindhoven
Philips Limileds Lighting Company, LLC - San Jose CA

H01L /06

257 13, 257 99, 257 79, 257E33008

A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.

8471280, Jun 25, 2013

Nov 6, 2009

12/613924

Rafael I. Aldaz - Pleasanton CA, US
Grigoriy Basin - San Francisco CA, US
Paul S. Martin - Singapore, SG
Michael Krames - Los Altos CA, US

Koninklijke Philips Electronics N.V. - Eindhoven

H01L 23/29

257 98, 257788, 257789, 257791, 257795, 257E23023

In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiOto increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.

8507929, Aug 13, 2013

Jun 16, 2008

12/139999

Patrick N. Grillot - San Jose CA, US
Rafael I. Aldaz - Santa Clara CA, US
Eugene I. Chen - Palo Alto CA, US
Sateria Salim - San Jose CA, US

Koninklijke Philips Electronics N.V. - Eindhoven

H01L 33/00
H01L 33/12
H01L 21/00

257 97, 257 94, 257 95, 257 96, 257E33023, 257E33032, 438 46, 438 47

One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vassociated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.

8536608, Sep 17, 2013

Mar 29, 2012

13/433424

Aurelien Jean Francois David - San Francisco CA, US
Rafael I. Aldaz - Pleasanton CA, US
Mark Melvin Butterworth - Santa Clara CA, US
Serge J. A. Bierhuizen - San Jose CA, US

Koninklijke Philips N.V. - Eindhoven

H01L 33/00
H01L 21/00

257 98, 257 95, 257 99, 257100, 257E33001, 438 26, 438 27, 313502, 313512

A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.