Ralph A Albano, Age 6110186 Cape Ann Dr, Columbia, MD 21046

6913796, Jul 5, 2005

Sep 14, 2001

09/952649

Ralph Albano - Columbia MD, US
Cory Bargeron - Midland MI, US
Jeff Bremmer - Midland MI, US
Phil Dembowski - Midland MI, US
Orlando Escorcia - Falls Church VA, US
Qingyuan Han - Columbia MD, US
Nick Sbrockey - Gaithersburg MD, US
Carlo Waldfried - Falls Church VA, US

Axcelis Technologies, Inc. - Beverly MA
Dow Corning Corporation - Midland MI

H05H001/24
B05D003/06
C08F002/52
C08J007/18

427536, 427535, 427539, 427489, 438788, 438789

Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material. The post-plasma treated, plasma cured porous dielectric material has a dielectric constant between about 1. 1 and about 3.

7011868, Mar 14, 2006

Jul 24, 2003

10/627894

Carlo Waldfried - Falls Church VA, US
Qingyuan Han - Columbia MD, US
Orlando Escorcia - Falls Church VA, US
Ralph Albano - Columbia MD, US
Atsushi Shiota - Ibaraki, JP

Axcelis Technologies, Inc. - Beverly MA

C08J 7/18
H01L 21/26
H01L 21/3105
H01L 21/314
H05L 1/24

427489, 427535, 427536, 438788, 438789, 438780

Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR 1. 72(b).

2002010, Aug 1, 2002

Jul 16, 2001

09/906276

Qingyuan Han - Columbia MD, US
Carlo Waldfried - Falls Church VA, US
Orlando Escorcia - Falls Church VA, US
Ralph Albano - Columbia MD, US
Ivan Berry - Ellicott City MD, US
Jeff Jang - Calabasas CA, US
Ian Ball - San Diego CA, US

B32B009/04
B05D003/02
B05D003/06

428/446000, 427/489000, 427/387000, 428/702000

Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si—CHgroups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than about 100%, and more typically greater than about 200%. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350 C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than about 450 C. The annealed, plasma cured film has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

2003005, Mar 20, 2003

Sep 14, 2001

09/952398

Ralph Albano - Columbia MD, US
Cory Bargeron - Midland MI, US
Ivan Berry - Ellicott City MD, US
Jeff Bremmer - Midland MI, US
Orlando Escorcia - Falls Church VA, US
Qingyuan Han - Columbia MD, US
Ari Margolis - Hollywood FL, US
Carlo Waldfried - Falls Church VA, US

B05D003/06

427/487000, 427/558000, 427/569000

Low dielectric constant porous materials with improved elastic modulus. The process of making such porous materials involves providing a porous dielectric material and ultraviolet (UV) curing of the porous dielectric material to produce a UV cured porous dielectric material. UV curing of the porous dielectric material yields a material with improved modulus and comparable dielectric constant. The improvement in elastic modulus is typically greater than about 50%. The porous dielectric material is UV cured for no more than about 300 seconds at a temperature less than about 450 C. The UV cured porous dielectric material can optionally be post-UV treated. Rapid Anneal Processing (RAP) of the UV cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus as compared to the UV cured porous dielectric material. The annealing temperature is typically less than about 450 C., and the annealing time is typically less than about 60 minutes. The post-UV treated, UV cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus.

2003015, Aug 21, 2003

Jan 17, 2003

10/346560

Carlo Waldfried - Falls Church VA, US
Qingyuan Han - Columbia MD, US
Orlando Escorcia - Falls Church VA, US
Ralph Albano - Columbia MD, US
Ivan Berry - Ellicott City MD, US
Atsushi Shiota - Ibaraki, JP

B05D003/02
H05H001/00

427/488000, 427/569000, 427/372200

Low dielectric constant porous materials with improved elastic modulus and film hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and hardness, but with a higher dielectric constant. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The improvement in film hardness is typically greater than or about 50%. The fluorine-free plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the fluorine-free plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and film hardness as compared to the fluorine-free plasma cured porous dielectric material. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).