Robert C Camilletti, Age 64Fulshear, TX

Robert Camilletti Phones & Addresses

Fulshear, TX

Midland, MI

533 Charleston Rd, Mount Laurel, NJ 08054

1210 Hillcrest Dr, Lake, MI 48632

Hamilton Sq, NJ

Palmyra, NJ

5710 Woodberry Ct, Midland, MI 48640

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Mentions for Robert C Camilletti

Publications & IP owners

Us Patents

Organic Light-Emitting Diode

US Patent:
2006015, Jul 20, 2006
Filed:
Feb 24, 2004
Appl. No.:
10/547456
Inventors:
Robert Camilletti - Midland MI, US
Byung Hwang - Midland MI, US
Mark Loboda - Bay City MI, US
Assignee:
DOW CORNING CORPORATION - Midland MI
International Classification:
H05B 33/22
H05B 33/14
US Classification:
313504000, 428690000, 313503000
Abstract:
An organic light-emitting diode comprising a first and second barrier coating, wherein the barrier coating is selected from (i) amorphous silicon carbide, (ii) an amorphous silicon carbide alloy comprising at least one element selected from F, N, B, and P, (iii) hydrogenated silicon oxycarbide, (iv) a coating prepared by (a) curing a hydrogen silsesquioxane resin with an electron beam or (b) reacting a hydrogen silsesquioxane resin using a chemical vapor deposition process; and (v) a mutilayer combination of at least two of (i), (ii), (iii), and (iv).

Electronic Package And Method Of Preparing Same

US Patent:
2009011, Apr 30, 2009
Filed:
Apr 24, 2007
Appl. No.:
12/301039
Inventors:
John Albaugh - Freeland MI, US
Robert Camilletti - Midland MI, US
International Classification:
H01L 23/29
B05D 5/00
H01L 23/31
G03F 7/075
B32B 9/04
US Classification:
428336, 427 58, 4284111
Abstract:
An electronic package comprising an interfacial coating between a first inorganic barrier coating and a second inorganic barrier coating, wherein the interfacial coating comprises a cured product of a silicone resin; and methods of preparing the electronic package.

Coated Substrates And Methods For Their Preparation

US Patent:
2009013, May 21, 2009
Filed:
Sep 18, 2006
Appl. No.:
11/992871
Inventors:
John Dean Albaugh - Freeland MI, US
Masaaki Amako - Chiba, JP
Robert Charles Camilletti - Midland MI, US
Dong Choi - Midland MI, US
William Weidner - Bay City MI, US
Ludmil Zambov - Midland MI, US
International Classification:
B32B 27/00
B05D 1/36
US Classification:
428447, 4274071
Abstract:
Coated substrates comprising an inorganic barrier coating and an interfacial coating, wherein the interfacial coating comprises a cured product of a silicone resin having silicon-bonded radiation-sensitive groups; and methods of preparing the coated substrates.

Tamper-Proof Electronic Coatings

US Patent:
5693701, Dec 2, 1997
Filed:
Oct 26, 1995
Appl. No.:
8/548851
Inventors:
Robert Charles Camilletti - Midland MI
Loren Andrew Haluska - Midland MI
Keith Winton Michael - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C08K 332
US Classification:
524417
Abstract:
Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and an inorganic salt onto the electronic device, wherein the inorganic salt is one which reacts with a wet etch to yield an acid or base that damages the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.

Tamper-Proof Electronic Coatings

US Patent:
5916944, Jun 29, 1999
Filed:
Sep 29, 1997
Appl. No.:
8/939833
Inventors:
Robert Charles Camilletti - Midland MI
Loren Andrew Haluska - Midland MI
Keith Winton Michael - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
C08K 504
US Classification:
524394
Abstract:
Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and a filler onto the electronic device, wherein the filler is one which reacts in an oxidizing atmosphere to liberate enough heat to damage the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.

Method Of Forming Si-O Containing Coatings

US Patent:
5441765, Aug 15, 1995
Filed:
Sep 22, 1993
Appl. No.:
8/124529
Inventors:
David S. Ballance - Midland MI
Robert C. Camilletti - Midland MI
Diana K. Dunn - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
B05D 302
US Classification:
427228
Abstract:
Disclosed is a method for forming improved Si--0 containing coatings on electronic substrate. The method comprises treating Si--0 containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.

Curing Hydrogen Silsesquioxane Resin With An Electron Beam

US Patent:
5609925, Mar 11, 1997
Filed:
Dec 4, 1995
Appl. No.:
8/566820
Inventors:
Robert C. Camilletti - Midland MI
Irfan Saadat - Santa Clara CA
Michael Thomas - Milpitas CA
Assignee:
Dow Corning Corporation - Midland MI
National Semiconductor Corporation - Santa Clara CA
International Classification:
B05D 306
US Classification:
427503
Abstract:
A low temperature method of forming silica-containing ceramic coatings on substrates in which a coating containing hydrogen silsesquioxane resin is applied on a substrate and exposed to an electron beam for a time sufficient to convert the hydrogen silsesquioxane resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.

Tamper-Proof Electronic Coatings

US Patent:
5458912, Oct 17, 1995
Filed:
Aug 9, 1993
Appl. No.:
8/103142
Inventors:
Robert C. Camilletti - Midland MI
Loren A. Haluska - Midland MI
Keith W. Michael - Midland MI
Assignee:
Dow Corning Corporation - Midland MI
International Classification:
B05D 302
C06B 4510
US Classification:
4271264
Abstract:
Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and a filler onto the electronic device, wherein the filler is one which reacts in an oxidizing atmosphere to liberate enough heat to damage the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.

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