Inventors:
Norman W. Parker - Fairfield CA
Robert D. Tolles - Santa Clara CA
Harry Q. Lee - Mountain View CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
Abstract:
Apparatus and concomitant method for simulating a chemical mechanical polishing (CMP) system containing a polishing pad, a chuck for supporting a substrate, a positioner for positioning the polishing pad with respect to the substrate, a chuck rotator for rotating the chuck, and a polishing pad rotator for rotating the polishing pad. The CMP system simulation method comprises: defining polishing pad and substrate parameters; defining simulation parameters; determining, in response to said polishing pad, substrate and simulation parameters, a polishing result; and displaying the polishing result. Additionally, the simulation optimizes selected parameters to achieve a specified polishing non-uniformity across a substrate. Also, the simulation and optimization routines are interfaced to CMP system hardware to optimally control a substrate polishing process to achieve predetermined substrate polishing non-uniformity.