Roland Rudolf Stumpf, Age 611615 Ridgecrest Dr SE, Albuquerque, NM 87108

Roland Stumpf Phones & Addresses

1615 Ridgecrest Dr SE, Albuquerque, NM 87108

1711 Morningrise Pl SE, Albuquerque, NM 87108 (505) 232-4506

5880 Welch Ln, Livermore, CA 94550 (925) 455-5689

Santa Fe, NM

814 Madeira Dr, Pleasanton, CA 94566 (925) 485-3514

1711 Morningrise Pl SE, Albuquerque, NM 87108 (505) 488-5472

Work

Position: Private Household Service Occupations

Education

Degree: High school graduate or higher

Mentions for Roland Rudolf Stumpf

Roland Stumpf resumes & CV records

Resumes

Roland Stumpf Photo 18

Patent Researcher

Location:
Albuquerque, NM
Industry:
Legal Services
Work:
Rws Ip Services
Patent Researcher
Patexia
Freelance Patent Researcher
Article One Partners
Freelance Patent Researcher
Labstart Aug 2009 - Apr 2010
Consultant
Sandia National Laboratories Jun 2002 - Aug 2006
Principal Member of the Technical Staff
Motorola Solutions Jan 1998 - Feb 2002
Principal Research Scientist
Sandia National Laboratories Nov 1993 - Jan 1998
Postdoctoral Researcher
Skills:
Scientific Computing, Physics, Fortran, Materials Science, Simulations, R&D, Patents, Mathematical Modeling, Experimentation, Nanotechnology, Mathematica
Interests:
Children
Languages:
German
English
French
Spanish
Roland Stumpf Photo 19

Pmts

Location:
Albuquerque, NM
Industry:
Research
Work:
Sandia National Laboratories
Pmts
Roland Stumpf Photo 20

Roland Stumpf

Publications & IP owners

Us Patents

Magnetic Nanomaterials And Synthesis Method

US Patent:
7429339, Sep 30, 2008
Filed:
Feb 6, 2003
Appl. No.:
10/505701
Inventors:
Philippe Renaud - Toulouse, FR
Frederic Dumestre - Toulouse, FR
Bruno Chaudret - Vigoulet, FR
Marie Claire Fromen - Toulouse, FR
Marie-Jose Casanove - Toulouse, FR
Peter Zurcher - Tempe AZ, US
Roland Stumpf - Livermore CA, US
Catherine Amiens - Toulouse, FR
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01K 1/00
US Classification:
252 6254, 252 6255, 252 6252, 428403, 428407, 977838, 977830, 977810
Abstract:
A magnetic nanoparticle (), a magnetic nanomaterial (), assembly (), and a method for synthsising a magnetic nanoparticle, relating to thermodynamically stable and air stable ferromagnetic nanoparticles of adjustable aspect ratio made upon decomposition of organometallic precursors in solution in the presence of a reaction gas and a mixture of organic ligands. The magnetic nanomaterial comprises magnetic nanoparticles of homogeneous size, shape, and magnetic orientation that comprises a magnetic core () ferromagnetic at room temperature and/or operating temperatures, and a non-magnetic matrix () encapsulating the magnetic core. This magnetic nanomaterial could be used in high frequency integrated circuit applications, such as used in wireless portable electronic devices, to enchance magnetic field confinement and improve passive component performance at MHz and GHz frequency in a variety of passive and active devices, such as transformers, on-chip signal isolation, inductors, and the like.

Process Of Forming A Semiconductor Device And A Semiconductor Device

US Patent:
6518070, Feb 11, 2003
Filed:
May 17, 2000
Appl. No.:
09/571586
Inventors:
Prasad V. Alluri - Round Rock TX
Mark Victor Raymond - Austin TX
Sucharita Madhukar - Austin TX
Roland R. Stumpf - Albuquerque NM
Chun-Li Liu - Los Alamos NM
Clarence J. Tracy - Tempe AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2170
US Classification:
438 3, 438396, 438240, 438395
Abstract:
A process for forming a capacitor with a high-k dielectric or ferroelectric layer within a semiconductor device is used to reduce the likelihood of oxidation or materials interactions between that layer and an underlying layer. A first electrode layer includes atoms that form along grain boundaries within the first electrode layer to reduce the oxidation of a conductive plug or undesired materials interactions.

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