Ronald S Wong, Age 641306 Trestlewood Ln, San Jose, CA 95138

Ronald Wong Phones & Addresses

3626 Noriega St, San Francisco, CA 94122 (415) 731-7546 (415) 753-0716

Ashburn, VA

Gainesville, VA

29955 Red Maple Ct, Hayward, CA 94544 (510) 537-9792

San Jose, CA

Newark, CA

Manassas, VA

Prince William, VA

Santa Clara, CA

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Mentions for Ronald S Wong

Career records & work history

Medicine Doctors

Ronald J. Wong

Specialties:
Colon & Rectal Surgery
Work:
Colorectal Associates
1380 Lusitana St STE 614, Honolulu, HI 96813
(808) 524-1856 (phone) (808) 524-8331 (fax)
Education:
Medical School
University of Hawaii Burns School of Medicine
Graduated: 1981
Procedures:
Hemorrhoid Procedures, Proctosigmoidoscopy, Colonoscopy
Conditions:
Benign Polyps of the Colon
Languages:
English
Description:
Dr. Wong graduated from the University of Hawaii Burns School of Medicine in 1981. He works in Honolulu, HI and specializes in Colon & Rectal Surgery. Dr. Wong is affiliated with Pali Momi Medical Center and Queens Medical Center.

Ronald N. Wong

Specialties:
Otolaryngology
Work:
Valley Family Health CenterAdventist Health Community Care
1025 N Douty St, Hanford, CA 93230
(559) 583-2254 (phone) (559) 537-0230 (fax)
Site
Sante Community PhysiciansRonald N Wong MD
355 Campus Dr STE B, Hanford, CA 93230
(559) 584-6684 (phone) (559) 584-6686 (fax)
Education:
Medical School
Loma Linda University School of Medicine
Graduated: 1975
Procedures:
Tonsillectomy or Adenoidectomy, Allergen Immunotherapy, Hearing Evaluation, Inner Ear Tests, Myringotomy and Tympanotomy, Rhinoplasty, Sinus Surgery, Skull/Facial Bone Fractures and Dislocations, Tympanoplasty
Conditions:
Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Benign Paroxysmal Positional Vertigo, Chronic Sinusitis, Deviated Nasal Septum, Hearing Loss, Obstructive Sleep Apnea
Languages:
English
Description:
Dr. Wong graduated from the Loma Linda University School of Medicine in 1975. He works in Hanford, CA and 1 other location and specializes in Otolaryngology. Dr. Wong is affiliated with Adventist Medical Center Hanford.

Ronald D. Wong

Specialties:
Internal Medicine
Work:
South San Antonio Medical Associates
102 Palo Alto Rd STE 125, San Antonio, TX 78211
(210) 924-7158 (phone) (210) 924-4642 (fax)
South San Antonio Medical Associates
2207 S Zarzamora St, San Antonio, TX 78207
(210) 229-1615 (phone) (210) 224-6305 (fax)
Education:
Medical School
Univ Del Noreste, Esc De Med, Tampico, Tamaulipas, Mexico
Graduated: 1983
Procedures:
Pulmonary Function Tests, Skin Tags Removal, Vaccine Administration
Conditions:
Abnormal Vaginal Bleeding, Acne, Acute Bronchitis, Acute Conjunctivitis, Acute Pharyngitis, Acute Sinusitis, Angina Pectoris, Anxiety Phobic Disorders, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Benign Prostatic Hypertrophy, Bipolar Disorder, Bronchial Asthma, Candidiasis, Cardiac Arrhythmia, Carpel Tunnel Syndrome, Chronic Renal Disease, Cirrhosis, Constipation, Contact Dermatitis, Dermatitis, Erectile Dysfunction (ED), Gastroesophageal Reflux Disease (GERD), Gout, Hearing Loss, Heart Failure, Hemorrhoids, Herpes Simplex, Herpes Zoster, Hyperthyroidism, Infectious Liver Disease, Iron Deficiency Anemia, Ischemic Heart Disease, Menopausal and Postmenopausal Disorders, Metabolic Syndrome, Migraine Headache, Obstructive Sleep Apnea, Osteoarthritis, Osteoporosis, Otitis Media, Peripheral Nerve Disorders, Plantar Warts, Psoriasis, Rheumatoid Arthritis, Sciatica, Skin and Subcutaneous Infections, Substance Abuse and/or Dependency, Systemic Lupus Erythematosus, Tinea Pedis, Tinea Unguium, Urinary Incontinence, Varicose Veins, Vitamin B12 Deficiency Anemia, Vitamin D Deficiency, Abdominal Hernia, Acute Pancreatitis, Acute Renal Failure, Acute Upper Respiratory Tract Infections, Alopecia Areata, Alzheimer's Disease, Anal or Rectal Abscess, Anemia, Aortic Valvular Disease, Atherosclerosis, Bell's Palsy, Burns, Calculus of the Urinary System, Candidiasis of Vulva and Vagina, Cataract, Chickenpox, Cholelethiasis or Cholecystitis, Chronic Bronchitis, Croup, Cystic Fibrosis (CF, Dehydration, Dementia, Diabetes Mellitus (DM), Diabetic Peripheral Neuropathy, Disorders of Lipoid Metabolism, Diverticulitis, Eating Disorders, Epilepsy, Esophagitis, Femoral Hernia, Fractures, Dislocations, Derangement, and Sprains, Gastritis and Duodenitis, Gastrointestinal Hemorrhage, Gingival and Periodontal Diseases, Glaucoma, Hemolytic Anemia, Hemorrhagic stroke, Herpes Genitalis, Hypertension (HTN), Hypoparathyroidism, Hypothyroidism, Inflammatory Bowel Disease (IBD), Inguinal Hernia, Internal Derangement of Knee Cartilage, Intervertebral Disc Degeneration, Intestinal Obstruction, Irritable Bowel Syndrome (IBS), Ischemic Stroke, Lateral Epicondylitis, Multiple Sclerosis (MS), Non-Toxic Goiter, Obsessive-Compulsive Disorder (OCD), Osteomyelitis, Overweight and Obesity, Parkinson's Disease, Paroxysmal Supreventricular Tachycardia (PSVT), Peptic Ulcer Disease, Phlebitis and Thrombophlebitis, Plantar Fascitis, Pneumonia, Poisoning by Drugs, Meds, or Biological Substances, Post Traumatic Stress Disorder (PTSD), Premenstrual Syndrome (PMS), Pulmonary Embolism, Raynaud's Disease, Rosacea, Scoliosis or Kyphoscoliosis, Sexually Transmitted Diseases (STDs), Sickle-Cell Disease, Spinal Stenosis, Sunburn, Tempromandibular Joint Disorders (TMJ), Tension Headache, Thyroid Cancer, Thyroiditis, Urinary Tract Infection (UT), Venous Embolism and Thrombosis, Ventral Hernia, Viral Meningitis
Languages:
English, Spanish
Description:
Dr. Wong graduated from the Univ Del Noreste, Esc De Med, Tampico, Tamaulipas, Mexico in 1983. He works in San Antonio, TX and 1 other location and specializes in Internal Medicine. Dr. Wong is affiliated with Acuity Hospital Of South Texas, Baptist Medical Center, Select Specialty Hospital Houston West and Southwest General Hospital.

Ronald Wong

Specialties:
Pediatrics
Work:
Geisinger Medical Center Pediatric Critical Care
100 N Academy Ave, Danville, PA 17822
(570) 214-8790 (phone) (570) 214-6498 (fax)
Languages:
English
Description:
Dr. Wong works in Danville, PA and specializes in Pediatrics. Dr. Wong is affiliated with Geisinger Medical Center.

License Records

Ronald Wong

Address:
182 2 St #500, San Francisco, CA
Licenses:
License #: 41231 - Active
Category: Professional
Issued Date: Jul 13, 2004
Expiration Date: Sep 30, 2019

Ronald Wong resumes & CV records

Resumes

Ronald Wong Photo 44

Ronald Wong - Walnut Creek, CA

Work:
Intel Corp. - Santa Clara, CA 2010 to 2012
Consultant; QA Manager
Highland & Sonoma Valley Hospitals - Oakland, CA 2009 to 2010
MEP Construction Manager
U.S. Department of Veterans Affairs - Antioch, CA 2007 to 2009
Project Manager
Santa Maria Town Center Mall 2006 to 2007
Consultant; Project Manager
DC Engineering - San Mateo, CA 2005 to 2006
Project Manager
Applied Materials 2002 to 2005
Consultant; Project Manager
Richlen Construction - San Francisco, CA 2001 to 2002
Project Manager
Applied Materials, Western Digital, Linear Tech 1998 to 1998
Consultant; Project Manager
Education:
San Jose State University - San Jose, CA 1990
B.S. in Mechanical Engineering

Publications & IP owners

Us Patents

Drain Side Gate Trench Metal-Oxide-Semiconductor Field Effect Transistor

US Patent:
6906380, Jun 14, 2005
Filed:
May 13, 2004
Appl. No.:
10/846339
Inventors:
Deva Pattanayak - Cupertino CA, US
Jason (Jianhai) Qi - San Jose CA, US
Yuming Bai - Hayward CA, US
Ronald Wong - Millbrae CA, US
Assignee:
Vishay-Siliconix - Santa Clara CA
International Classification:
H01L029/76
H01L029/94
H01L031/062
H01L031/113
H01L031/119
US Classification:
257331, 257332, 257344
Abstract:
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Method For Enabling A Photolab To Process Digital Images And Related Data

US Patent:
7126708, Oct 24, 2006
Filed:
Aug 31, 2001
Appl. No.:
09/945100
Inventors:
Christopher E. McConn - Santa Cruz CA, US
Ronald Wong - Campbell CA, US
John C. Marshall - Los Gatos CA, US
Alvin Wang - Palo Alto CA, US
Assignee:
Canon Kabushiki Kaisha - Tokyo
International Classification:
G06F 15/00
US Classification:
358 115, 358402
Abstract:
A system and business method for enabling photolabs to provide digital image processing services, and at the same time, to provide the photolabs with the ability to use their own branding in connection with their services and to the control of all business aspects of the service, including the creation of a customized website, digital image product offerings, branding, pricing, promotions, advertisements, and film prints and related image imprinted product fulfillment.

Method Of Manufacturing A Drain Side Gate Trench Metal-Oxide-Semiconductor Field Effect Transistor

US Patent:
7344945, Mar 18, 2008
Filed:
Dec 22, 2004
Appl. No.:
11/023327
Inventors:
Deva Pattanayak - Cupertino CA, US
Jason (Jianhai) Qi - San Jose CA, US
Yuming Bai - Hayward CA, US
Ronald Wong - Millbrae CA, US
Assignee:
Vishay-Siliconix - Santa Clara CA
International Classification:
H01L 21/336
US Classification:
438270, 438259, 438589
Abstract:
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device

US Patent:
8183629, May 22, 2012
Filed:
Mar 18, 2008
Appl. No.:
12/050929
Inventors:
Deva Pattanayak - Cupertino CA, US
Jason (Jianhai) Qi - San Jose CA, US
Yuming Bai - Hayward CA, US
Ronald Wong - Millbrae CA, US
Assignee:
Vishay-Siliconix - Santa Clara CA
International Classification:
H01L 27/88
US Classification:
257334, 257E2706, 257330, 257328, 257331, 257332, 257333, 257369, 257288, 257401, 257E29149
Abstract:
Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

Power Mosfet Contact Metallization

US Patent:
8471390, Jun 25, 2013
Filed:
May 2, 2007
Appl. No.:
11/799889
Inventors:
Ronald Wong - Millbrae CA, US
Jason Qi - Frisco TX, US
Kyle Terrill - Santa Clara CA, US
Kuo-In Chen - Los Altos CA, US
Assignee:
Vishay-Siliconix - Santa Clara CA
International Classification:
H01L 23/48
US Classification:
257776
Abstract:
A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

Semiconductor Device With Trench-Like Feed-Throughs

US Patent:
2011010, May 5, 2011
Filed:
Oct 30, 2009
Appl. No.:
12/610148
Inventors:
Deva Pattanayak - Saratoga CA, US
King Owyang - Atherton CA, US
Mohammed Kasem - Santa Clara CA, US
Kyle Terrill - Santa Clara CA, US
Reuven Katraro - Rishon Lezion, IL
Kuo-In Chen - Los Altos CA, US
Calvin Choi - San Jose CA, US
Qufei Chen - San Jose CA, US
Ronald Wong - Millbrae CA, US
Kam Hong Lui - Santa Clara CA, US
Robert Xu - Fremont CA, US
Assignee:
VISHAY-SILICONIX - Santa Clara CA
International Classification:
H01L 23/48
H01L 23/488
H01L 21/768
US Classification:
257738, 257763, 438615, 257213, 257E21575, 257E23011, 257E23023
Abstract:
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Thicker Oxide Formation At The Trench Bottom By Selective Oxide Deposition

US Patent:
6709930, Mar 23, 2004
Filed:
Jun 21, 2002
Appl. No.:
10/176570
Inventors:
Ben Chan - San Francisco CA
Kam Hong Lui - Santa Clara CA
Christiana Yue - Milpitas CA
Ronald Wong - Millbrae CA
David Chang - Saratoga CA
Frederick P. Giles - San Jose CA
Kyle Terrill - Santa Clara CA
Mohamed N. Darwish - Campbell CA
Deva Pattanayak - Cupertino CA
Robert Q. Xu - Fremont CA
Kuo-in Chen - Los Altos CA
Assignee:
Siliconix Incorporated - Santa Clara CA
International Classification:
H01L 21336
US Classification:
438270, 438212, 438268, 438272, 438589
Abstract:
A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.

Methods Of Treatment Of Spontaneous Preterm Birth

US Patent:
2022034, Nov 3, 2022
Filed:
Mar 20, 2020
Appl. No.:
17/440178
Inventors:
- Oakland CA, US
- Stanford CA, US
Ronald Wong - San Carlos CA, US
David Stevenson - Stanford CA, US
Assignee:
The Regents of the University of California - Oakland CA
The Leland Stanford Junior University - Stanford CA
International Classification:
A61K 31/192
A61K 31/573
A61K 31/167
A61K 31/353
A61K 31/19
A61K 31/546
A61K 31/222
A61K 31/4402
A61K 31/4439
A61K 31/438
A61K 31/4035
A61K 31/43
A61K 31/135
A61P 15/06
Abstract:
Spontaneous preterm birth (sPTB) is premature delivery prior to 37 weeks of pregnancy and is a leading cause of infant mortality worldwide. sPTB is associated with a unique gene expression profile. Identified herein are numerous safe and proven therapeutic compositions used for unrelated indications that have the biological effect of reversing, in part, the gene expression profile of sPTB and which can be used in preventative or interventional treatments to prevent, delay, or ameliorate sPTB. The repurposed drugs include several Class A and Class B therapeutics that are regarded as safe or low risk in pregnant subjects.

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