Rudy Michael Emrick, Age 571617 E Heather Ave, Gilbert, AZ 85234

6531740, Mar 11, 2003

Jul 17, 2001

09/905903

Bruce Allen Bosco - Phoenix AZ
Rudy M. Emrick - Gilbert AZ
Steven James Franson - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 2701

257347, 257 43, 257195, 257192, 257190, 257350, 257352, 257531, 257532

An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.

6646293, Nov 11, 2003

Jul 18, 2001

09/906783

Rudy M. Emrick - Gilbert AZ
Stephen Kent Rockwell - Mesa AZ
John E. Holmes - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 310328

257194, 257190

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Once such a structure is built, a high electron mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT) can be constructed on the structure. A HEMT or HBT of the above structure can then be used in a switch or in an amplifier.

6653910, Nov 25, 2003

Dec 21, 2001

10/027515

Nestor J. Escalera - Gilbert AZ
Rudy M. Emrick - Gilbert AZ

Motorola, Inc. - Schaumburg IL

H03H 742

333 26, 333 25, 455326

A monolithically integrable spiral balun comprises a substrate having first, second, third, and fourth transmission lines formed thereon. The first transmission line has a first end coupled to receive an input signal and has a second end. The first transmission line forms a spiral that winds in a first direction from its first end to its second end. The second transmission line has a first end and has a second end electrically coupled to the second end of the first transmission line. The second transmission line forms a second spiral that winds in a second direction from its first end to its second end. The third transmission line has a first end for providing a first output and a second end for coupling to a first potential. The third transmission line forms a third spiral that interleaves the first spiral and winds in the second direction from its first end to its second end. A fourth transmission line has a first end for providing a second output and a second end for coupling to a second potential.

6855992, Feb 15, 2005

Jul 24, 2001

09/910753

Rudy M. Emrick - Gilbert AZ, US
Bruce Allen Bosco - Phoenix AZ, US
John E. Holmes - Scottsdale AZ, US
Steven James Franson - Scottsdale AZ, US
Stephen Kent Rockwell - Mesa AZ, US

Motorola Inc. - Schaumburg IL

H01L031/119

257378, 257 78, 257 16, 257 43, 257 63, 257343, 438 46, 438234

A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

6917256, Jul 12, 2005

Aug 20, 2002

10/224252

Rudy Michael Emrick - Gilbert AZ, US
Richard Dennis Heidinger - Chandler AZ, US

Motorola, Inc. - Schaumburg IL

H03H005/00
H01P001/00

333 26, 333248

According to the preferred exemplary embodiments of the present invention, a transmission line, such as microstrip, is connected to a waveguide using suspended stripline as an intermediate connection. This method results is a very low-loss transition, suitable for active microwave device applications such as low-noise receivers and transmitting devices such as power amplifiers.

6952044, Oct 4, 2005

May 31, 2002

10/161423

Steven J. Franson - Scottsdale AZ, US
Rudy M. Emrick - Gilbert AZ, US
Bruce A. Bosco - Phoenix AZ, US

Motorola, Inc. - Schaumburg IL

H01L029/40

257664, 257752, 257753

According to the most preferred embodiments of the present invention, at least one of the two plates of a capacitor is formed in at least two different layers of an integrated circuit. The methods of the present invention uses “air bridges” or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.

7109938, Sep 19, 2006

Oct 29, 2004

10/978779

Steven J. Franson - Scottsdale AZ, US
Bruce A. Bosco - Phoenix AZ, US
Rudy M. Emrick - Gilbert AZ, US
John E. Holmes - Scottsdale AZ, US

Motorola, Inc. - Schaumburg IL

H01Q 13/10

343767, 343713, 343840

In one embodiment, an improved transceiver assembly for a vehicle capable of detecting potentially hazardous objects is disclosed. The transceiver assembly comprises a tapered slot feed antenna for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that oscillates to sweep the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna. The antenna is preferably formed on a printed circuit board (PCB) (substrate), which can include additional circuitry necessary to operate the antenna, and which is preferably mounted at an acute angle with respect to the housing to direct the beam at the parabolic dish.

7187334, Mar 6, 2007

Oct 29, 2004

10/978675

Steven J. Franson - Scottsdale AZ, US
Rudy M. Emrick - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H01Q 1/32
H01Q 19/12

343713, 343700 MS, 343840

An improved transceiver assembly for a vehicle for detecting potentially hazardous objects is disclosed. The transceiver assembly preferably comprises a patch array feed antenna having an array of a plurality of patches for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that moves to sweeps the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna.