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Sangeeta B Dixit, Age 63280 Apricot Ln, Mountain View, CA 94040

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Known as:
Sangeeta Barua Dixit Sangeeta Te Dixit Sangeeta B Barua Sangeeta B Trustee A Dixit Sangeeta T
Related to:
Nisha B Maniar 43

Sangeeta Dixit Phones & Addresses

280 Apricot Ln, Mountain View, CA 94040 (650) 967-9222

Los Banos, CA

Madera, CA

Merced, CA

Mentions for Sangeeta B Dixit

Sangeeta Dixit resumes & CV records

Resumes

Sangeeta Dixit Photo 25

Global Product Manager, Applied Global Services At Applied Materials

Location:
5225 west Wiley Post Way, Salt Lake City, UT 84116
Industry:
Semiconductors
Work:
Applied Materials
Global Product Manager, Applied Global Services at Applied Materials
Education:
Syracuse University
Master of Science, Masters, Materials Science Indian Institute of Technology, Delhi
Bachelors, Bachelor of Technology, Chemical Engineering
Skills:
Pmp, Product Life Cycle Management, Cost Estimating, Technology Development, Program Management, Market Research, Product Development, Semiconductor Industry, Pvd, Photovoltaics, Product Management, Solar Cells, Product Lifecycle Management, Cvd, Solar Energy, Project Estimation, Materials Science, Thin Films, Semiconductors, Manufacturing, Competitive Analysis, Engineering Management
Sangeeta Dixit Photo 26

Sangeeta Dixit

Publications & IP owners

Us Patents

Silicon Nitride Passivation For A Solar Cell

US Patent:
7993700, Aug 9, 2011
Filed:
Apr 12, 2007
Appl. No.:
11/734742
Inventors:
Lisong Zhou - Sunnyvale CA, US
Sangeeta Dixit - Mountain View CA, US
Soo Young Choi - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B05D 5/12
US Classification:
427 74, 427 58, 4272481, 427569, 118715
Abstract:
A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Silicon Carbide For Crystalline Silicon Solar Cell Surface Passivation

US Patent:
2009025, Oct 8, 2009
Filed:
Mar 26, 2009
Appl. No.:
12/412177
Inventors:
Lisong Zhou - Sunnyvale CA, US
Sangeeta Dixit - Sunnyvale CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01L 31/0224
H01L 31/18
US Classification:
136256, 438 98, 257E31124
Abstract:
Embodiments of the present invention generally provide methods for depositing a silicon carbide (SiC) passivation layer that may act as a high-quality passivation layer for solar cells. Embodiments of the invention also provide methods for depositing a silicon carbide/silicon oxide passivation layer that acts as a high-quality rear surface passivation layer for solar cells. The methods described herein enable the use of deposition systems configured for processing large-area substrates for solar cell processing. According to embodiments of the invention, a SiC passivation layer may be formed with improved minority carrier lifetime measurements. The SiC passivation layer may be formed at a temperature between about 150 C. and 450 C., which is much lower than temperatures for thermal oxide passivation.

Silicon Nitride Passivation For A Solar Cell

US Patent:
2010019, Aug 5, 2010
Filed:
Apr 9, 2010
Appl. No.:
12/757740
Inventors:
Lisong Zhou - Sunnyvale CA, US
Sangeeta Dixit - Mountain View CA, US
Soo Young Choi - Fremont CA, US
International Classification:
H01L 21/31
US Classification:
438761, 257E2124
Abstract:
A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Possible Relatives

Jay M Dixit  Manish Dixit  Meena K Dixit  Sharad A Dixit  Tushar B Dixit  Vivek Dixit  Chandra K Dixit  Sangeeta K Kumar  Sangeeta Rao  Sangeeta Gupta 

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