Tatsuru Te Tanaka, Age 591300 Nadine Dr, Campbell, CA 95008

8573579, Nov 5, 2013

Mar 1, 2010

12/715144

Chang Bok Yi - Fremont CA, US
Tatsuru Tanaka - Campbell CA, US
Chun Wai Joseph Tong - San Jose CA, US
Hongling Liu - Sunnyvale CA, US
Paul S. McLeod - Berkeley CA, US

Seagate Technology LLC - Cupertino CA

B25B 5/16

269254CS, 269 21

Methods and apparatus are provided for static-biasing a pre-metalized non-conductive substrate within a process chamber. A substrate holder that holds a pre-metalized non-conductive substrate is engaged by a lift mechanism that provides movement of the substrate in a first, upward direction to a contact position within the process chamber and in a second direction to a non-contact position. When the substrate holder is moved to the contact position, the substrate electrically engages a conductive spring-loaded compliance mechanism that is mounted in a fixed position within the process chamber. The spring-loaded compliance mechanism is connected to a bias-voltage feed-through for the process chamber that applies a bias voltage to the substrate via the spring-loaded compliance mechanism.

2004025, Dec 16, 2004

May 21, 2004

10/849848

Chang Yi - Fremont CA, US
Tatsuru Tanaka - Campbell CA, US
Paul McLeod - Berkeley CA, US

SEAGATE TECHNOLOGY LLC

F28F005/00

165/086000, 165/185000

An apparatus and method for cooling a planar workpiece, such as a substrate of a recording disk, in an evacuated environment has a heat exchanging structure with at least two heat sinks having substantially parallel facing surfaces disposed within a vacuum chamber. A drive arrangement is connected to the heat sinks to controllably and dynamically drive the parallel facing surfaces of the heat sinks towards and away from each other.

2005013, Jun 23, 2005

Dec 19, 2003

10/739291

Tatsuru Tanaka - Campbell CA, US

C23C016/00
B05D005/12

118719000, 427127000

Apparatus for exposing at least one substrate/workpiece to a gas atmosphere under preselected pressure and temperature conditions, comprising: (a) a chamber defining an interior space and provided with inlet and outlet means at opposite ends thereof; (b) vacuum means for evacuating the interior space and including valve means for controlling the evacuating; (c) a pair of opposingly facing gas injection means in the interior space and defining an intermediate space therebetween for accommodating the at least one substrate/workpiece during transport through the chamber, each of the gas injection means including means for controlling the temperature thereof; (d) gas supply means for supplying the pair of gas injection means with a flow of a preselected gas and including valve means for controlling the gas flow; and (e) transport means for transporting the at least one substrate/workpiece through the interior space of said chamber via the intermediate space between the opposingly facing gas injection means.

2007015, Jul 12, 2007

Jan 12, 2006

11/330200

Chang Yi - Fremont CA, US
Tatsuru Tanaka - Campbell CA, US
Thomas Greenberg - Berkeley CA, US
Christopher Neill - San Jose CA, US

C23C 14/00

204192120, 204298010

A method of sputter depositing a substantially circumferentially uniform thin film on a surface of a circular, planar disk-shaped substrate, comprising steps of: (a) providing a cathode sputtering apparatus including: a vacuum chamber; a cathode sputtering source comprising a circularly-shaped sputtering target assembly with a first target having a planar sputtering surface and a circumferentially extending edge; and a circular disk-shaped substrate with a planar surface positioned in spaced opposition to the sputtering surface; and (b) sputter depositing the thin film on the substrate surface while providing the chamber with a substantially uniform flow of at least one process gas around the entirety of the circumferentially extending edge of the sputtering target assembly.

2007015, Jul 12, 2007

Jan 12, 2006

11/330198

Chang Yi - Fremont CA, US
Tatsuru Tanaka - Campbell CA, US

C23C 14/00

204298010

A cathode sputtering source comprises a heat sink comprising a substantially circularly-shaped planar disk formed of an electrically and thermally conductive material, with a circumferentially extending edge connecting first and second opposing major surfaces, the first major surface including a plurality of radially extending, recessed gas supply channels formed therein and extending from a central recess formed in the first major surface to the circumferentially extending edge; the second major surface including a gas inlet formed adjacent the circumferentially extending edge; a gas flow channel formed in the interior of the disk fluidly connects the gas inlet and central recess; and a substantially circular disk-shaped sputtering target is mounted on the first major surface, whereby gas supplied to the gas inlet is substantially uniformly distributed around the entirety of the circumferentially extending edge of the heat sink. Preferred embodiments include a rotatable magnetron magnet assembly positioned behind the heat sink.

2014005, Feb 20, 2014

Aug 17, 2012

13/588946

Chang B. YI - FREMONT CA, US
Hongling LIU - Sunnyvale CA, US
Hua YUAN - Fremont CA, US
Tatsuru TANAKA - Campbell CA, US

WD MEDIA, INC. - San Jose CA

G11B 5/851

427132, 118 58, 427127

A disk processing system having a heater chamber and dual single-sided sputter chambers each with a sustaining heater.

6517691, Feb 11, 2003

May 1, 2000

09/562039

Terry Bluck - Santa Clara CA
John Les Hughes - Rodeo CA
Eric C. Lawson - Sunnyvale CA
Tatsuru Tanaka - Campbell CA

Intevac, Inc. - Santa Clara CA

C23C 1434

20429825, 118719, 20429835, 156345, 414217, 414221, 41422207, 41422209, 41422212, 41422213, 41422501, 41422302, 41422605, 414938

A substrate processing system includes a primary processing assembly and secondary processing assembly. The secondary processing assembly has one or more interconnected modules and includes one or more process stations. The primary and secondary processing assemblies are connected by a vacuum conveyor, so that the substrates remain in vacuum during transport. The secondary processing assembly may include one or more modules which are interconnected to provide a desired system configuration. A dual processing module, including first and second process stations, is selectably operable in a serial mode or a parallel mode.

2016004, Feb 18, 2016

Aug 15, 2014

14/461153

- San Jose CA, US
TATSURU TANAKA - CAMPBELL CA, US
PHI CAM HA - SAN JOSE CA, US
NOE D. TABURAZA - UNION CITY CA, US
YEW MING CHIONG - SAN JOSE CA, US
HONGLING LIU - SUNNYVALE CA, US

F25D 31/00
F25B 9/00

Aspects of the present invention are directed to a cryogenic dynamic cooling apparatus and a cooling method for heat assisted magnetic recording media substrate. The cooling apparatus includes a chamber that is configured to receive a substrate. A substrate holder secures the substrate inside the chamber. The apparatus has a cooling plate that is movable between a retracted position and an extended position inside the chamber. The cooling plate provides clearance for movement of the substrate holder inside the chamber in the retracted position, and the cooling plate cools the substrate in the extended position. Also, the cooling plate is substantially parallel to and spaced apart from the substrate. The apparatus further includes a cryogenic cooling element operatively coupled to the cooling plate that is cooled by the cryogenic cooling element.