Teodor H Todorov, Age 47303 60Th St, New York, NY 10022

2012022, Sep 6, 2012

Mar 1, 2011

13/037798

Oki Gunawan - Fair Lawn NJ, US
Jeehwan Kim - Los Angeles CA, US
David B. Mitzi - Mahopac NY, US
Devendra K. Sadana - Pleasantville NY, US
Teodor K. Todorov - Yorktown Heights NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY

H01L 31/06
H01L 31/18

136255, 438 95, 257E31001

A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

2021030, Sep 30, 2021

Mar 24, 2020

16/828390

- Armonk NY, US
Martin Michael Frank - Dobbs Ferry NY, US
Teodor Krassimirov Todorov - Yorktown Heights NY, US

H01L 45/00

A method of fabricating a synaptic device is provided. The method includes forming a channel layer between a first terminal and a second terminal. The channel layer varies in resistance based on a magnesium concentration in the channel layer. The method further includes forming an electrolyte layer. The electrolyte layer includes a magnesium ion conductive material. A third terminal is formed over the electrolyte layer and applies a signal to the electrolyte layer and the channel layer.

2021002, Jan 21, 2021

Jul 17, 2019

16/513871

- Armonk NY, US
TAKASHI ANDO - TUCKAHOE NY, US
TEODOR KRASSIMIROV TODOROV - YORKTOWN HEIGHTS NY, US
JIANSHI TANG - ELMSFORD NY, US

H01L 29/786
H01L 29/24
G06N 3/063

A neuromorphic device includes a metal-oxide channel layer that has a variable-resistance between a first terminal and a second terminal. The neuromorphic device further includes a metal-oxide charge transfer layer over the metal-oxide channel layer that causes the metal-oxide channel layer to vary in resistance based on charge exchange between the metal-oxide charge transfer layer and the metal-oxide channel layer in accordance with an applied input signal. The neuromorphic device further includes a third terminal that applies the signal to the metal-oxide charge transfer layer and the metal-oxide channel layer.

2020024, Jul 30, 2020

Apr 13, 2020

16/847038

- Armonk NY, US
Yun Seog Lee - White Plains NY, US
Saurabh Singh - Yonkers NY, US
Teodor K. Todorov - Yorktown Heights NY, US

H01L 31/18
H01L 31/0749
H01L 31/0224
H01L 31/0468
H01L 31/0272

Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

2020024, Jul 30, 2020

Apr 13, 2020

16/846971

- Armonk NY, US
Yun Seog Lee - White Plains NY, US
Saurabh Singh - Yonkers NY, US
Teodor K. Todorov - Yorktown Heights NY, US

H01L 51/42
H01L 31/0272

Selenium-fullerene heterojunction solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a front contact on a substrate; depositing an n-type semiconducting layer on the front contact, wherein the n-type semiconducting layer comprises a fullerene or fullerene derivative; forming a p-type chalcogen absorber layer on the n-type semiconducting layer; depositing a high workfunction material onto the p-type chalcogen absorber layer, wherein the high workfunction material has a workfunction of greater than about 5.2 electron volts; and forming a back contact on the high workfunction material. Solar cells and other methods for formation thereof are also provided.

2019022, Jul 18, 2019

Jan 15, 2018

15/871464

- Armonk NY, US
Oki Gunawan - Westwood NJ, US
Saurabh Singh - Queens NY, US
Teodor K. Todorov - Yorktown Heights NY, US

H01M 4/48
H01M 10/0525
H01M 4/04
H01M 10/04
H01M 4/66
H01M 10/0562
H01M 10/0585

Low-voltage rechargeable microbatteries having a vanadium-based cathode are provided. In one aspect, a method of forming a battery is provided. The method includes the steps of: forming a first contact on a substrate; forming a cathode on the first contact, wherein the cathode is formed from a vanadium-containing material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a second contact on the anode. A battery having a vanadium-based cathode is also provided.

2019022, Jul 18, 2019

Jan 15, 2018

15/871488

- ARMONK NY, US
OKI GUNAWAN - WESTWOOD NJ, US
SAURABH SINGH - QUEENS NY, US
TEODOR K. TODOROV - YORKTOWN HEIGHTS NY, US

H01M 10/0585
H01M 10/0525
H01M 10/0562
H01M 4/131
H01M 4/525
H01M 4/48
H01M 4/66
H01M 4/04

Low-voltage rechargeable microbatteries are provided. In one aspect, a method of forming a microbattery includes: forming a cathode on a substrate, wherein the cathode includes a lithium intercalated material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a negative contact on the anode. A microbattery is also provided.

2019015, May 23, 2019

Dec 28, 2018

16/235148

- Armonk NY, US
Talia S. Gershon - White Plains NY, US
Richard A. Haight - Mahopac NY, US
Teodor K. Todorov - Yorktown Heights NY, US

H01L 31/0749
H01L 31/032
H01B 1/06
H01L 31/02
C09D 11/52
H01L 31/18

Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.