Thomas M Cameron, Age 4977 Mile Hill Rd S, Newtown, CT 06470

7439369, Oct 21, 2008

Jun 10, 2005

11/152525

David L. Thorn - Los Alamos NM, US
William Tumas - Los Alamos NM, US
P. Jeffrey Hay - Los Alamos NM, US
Daniel E. Schwarz - Los Alamos NM, US
Thomas M. Cameron - Los Alamos NM, US

Loa Alamos National Security, LLC - Los Alamos NM

C07D 235/02

5483027, 4236481, 423644, 5483017

A method and system for storing and evolving hydrogen employ chemical compounds that can be hydrogenated to store hydrogen and dehydrogenated to evolve hydrogen. A catalyst lowers the energy required for storing and evolving hydrogen. The method and system can provide hydrogen for devices that consume hydrogen as fuel.

7638074, Dec 29, 2009

Mar 12, 2007

12/282511

Chongying Xu - New Milford CT, US
Tianniu Chen - Rocky Hill CT, US
Thomas M. Cameron - Newtown CT, US
Jeffrey F. Roeder - Brookfield CT, US
Thomas H. Baum - New Fairfield CT, US

Advanced Technology Materials, Inc. - Danbury CT

C07F 3/00
C23C 16/00

260665R, 42725528, 1062866

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp), wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R-Ris the same as or different from one another, with each being independently selected from among hydrogen, C-Calkyl, C-Camino, C-Caryl, C-Calkoxy, C-Calkylsilyl, C-Calkenyl, RRRNNR, wherein R, Rand Rmay be the same as or different from one another and each is independently selected from hydrogen and C-Calkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

8168811, May 1, 2012

Jul 21, 2009

12/507048

Thomas M. Cameron - Newtown CT, US
Chongying Xu - New Milford CT, US
Tianniu Chen - Rocky Hill CT, US

Advanced Technology Materials, Inc. - Danbury CT

C07F 9/00
C07F 15/00
C07F 5/06

556 42, 556 45, 556 56, 556 57, 556 89, 556116, 556130, 556137, 556146, 556182, 556410, 10628719, 10628725

Precursors useful for vapor phase deposition processes, e. g. , CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I):.

8329140, Dec 11, 2012

Sep 11, 2008

12/283462

David L. Thorn - Los Alamos NM, US
William Tumas - Los Alamos NM, US
P. Jeffrey Hay - Los Alamos NM, US
Daniel E. Schwarz - Los Alamos NM, US
Thomas M. Cameron - Los Alamos NM, US

Los Alamos National Security, LLC - Los Alamos NM

C01B 3/02

4236481, 423644, 5483017, 5483027

A method and system for storing and evolving hydrogen (H) employ chemical compounds that can be hydrogenated to store hydrogen and dehydrogenated to evolve hydrogen. A catalyst lowers the energy required for storing and evolving hydrogen. The method and system can provide hydrogen for devices that consume hydrogen as fuel.

8376741, Feb 19, 2013

May 20, 2009

12/454605

Alan J. Bednaz - Terryville CT, US
Thomas B. Cameron - Avon CT, US
Michael R. Spring - Unionville CT, US

Ultimate Wireforms, Inc. - Bristol CT

A61C 7/02

433 22, 433 3

A handle for releasably retaining tubular sleeve-like crimpable stops is disclosed. The handle includes an elongated body with opposed ends and at least one receptacle positioned at one end of the body. The receptacle has an inside surface and defines an entry opening. The receptacle may be configured to mechanically retain the stop, or the stop may be releasably bonded to the receptacle by sticky substances like wax, any suitable adhesive or techniques such as heat bonding. The handle is molded from plastic in a color contrasting with the oral environment, such as orange. The handle aids in handling and positioning crimpable stops during installation of archwire assemblies in the oral environment. A stop retained in the disclosed handle is highly visible and can be handled without tools.

8455049, Jun 4, 2013

Aug 3, 2008

12/672684

Thomas M. Cameron - Newtown CT, US
Chongying Xu - New Milford CT, US

Advanced Technology Materials, Inc. - Danbury CT

C23C 16/44
C07F 3/00

4272481, 260665 R

A method of depositing a crystalline strontium titanate film on a substrate is provided, comprising carrying out an atomic layer deposition (ALD) process with strontium and titanium precursors, wherein the strontium precursor is bis(n-propyltetramethylcyclopentadienyl)strontium.

8524931, Sep 3, 2013

Mar 12, 2007

12/523704

Chongying Xu - New Milford CT, US
Bryan C. Hendrix - Danbury CT, US
Thomas M. Cameron - Newtown CT, US
Jeffrey F. Roeder - Brookfield CT, US
Matthias Stender - New Milford CT, US
Tianniu Chen - Rocky Hill CT, US

Advanced Technology Materials, Inc. - Danbury CT

C07F 15/00
C03C 17/10

556137, 106 124

Precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of strontium ruthenium oxide (SrRuO) thin films, e. g. , in the manufacture of microelectronic devices, as well as processes of making and using such precursors, and precursor supply systems containing such precursor compositions in packaged form. Cyclopentadienyl compounds of varied type are described, including cyclopentadienyl as well as non cyclopentadienyl ligands coordinated to ruthenium, strontium or barium central atoms. The precursors of the invention are useful for forming contacts for microelectronic memory device structures, and in a specific aspect for selectively coating copper metallization without deposition on associated dielectric, under deposition conditions in a forming gas ambient.

8574675, Nov 5, 2013

Mar 17, 2010

13/256832

Thomas M. Cameron - Newtown CT, US
Chongying Xu - New Milford CT, US
Weimin Li - New Milford CT, US

Advanced Technology Materials, Inc. - Danbury CT

C23C 16/00
H01L 21/28

427250, 4272481

A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.