Thomas P Devan Deceased4614 Highland Dr, Willoughby, OH 44094

Thomas Devan Phones & Addresses

4614 Highland Dr, Willoughby, OH 44094 (440) 942-4157

Parma, OH

4614 Highland Dr, Willoughby, OH 44094 (440) 821-3149

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Graduate or professional degree

Mentions for Thomas P Devan

Publications & IP owners

Us Patents

Pyrolytic Boron Nitride Crucible And Method

US Patent:
7147910, Dec 12, 2006
Filed:
Dec 29, 2003
Appl. No.:
10/747514
Inventors:
Ajit Y. Sane - Medina OH, US
Jeffrey Lennartz - Cleveland OH, US
Arthur Moore - Strongsville OH, US
Thomas Devan - Westlake OH, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
B32B 9/00
US Classification:
428216, 42725528, 428336, 428697, 428698, 428704, 432262, 432264
Abstract:
A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 0. 1 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0. 1 micron to 100 microns.

Wafer Handling Apparatus And Method Of Manufacturing Thereof

US Patent:
7364624, Apr 29, 2008
Filed:
Jan 16, 2004
Appl. No.:
10/759582
Inventors:
John Thomas Mariner - Avon Lake OH, US
Timothy J. Hejl - Independence OH, US
Douglas Alan Longworth - Cleveland Heights OH, US
Jeffrey Lennartz - Cleveland OH, US
Ajit Sane - Medina OH, US
Andrew John Macey - Medina OH, US
Jon Leist - North Olmsted OH, US
Thomas E. Devan - Westlake OH, US
Assignee:
Momentive Performance Materials Inc. - Wilton CT
International Classification:
C23C 16/00
C23F 1/00
H01L 21/306
US Classification:
118725, 15634552, 118728, 361234
Abstract:
A wafer processing device or apparatus, i. e. , a heater or an electrostatic chuck, comprises a planar support platen, a support shaft having centrally located bore, and a pair of electrical conductors located in the shaft. In one embodiment, the electrical conductors are concentrically located within the bore of the shaft, with the first electrical lead being in the form of a pyrolytic graphite rod and separated from the outer second graphite electrical lead by means of a pyrolytic boron nitride (pBN) coating. In a second embodiment, the support platen and the support shaft are formed from a single unitary body of graphite. In yet another embodiment of the device of the invention, the connection posts comprise a carbon fiber composite and the exposed ends of the electrical connectors are coated with a protective ceramic paste for extended life in operations.

Pyrolytic Boron Nitride Crucible And Method

US Patent:
2002018, Dec 5, 2002
Filed:
May 24, 2001
Appl. No.:
09/865395
Inventors:
Ajit Sane - Medina OH, US
Jeffrey Lennartz - Cleveland OH, US
Arthur Moore - Strongsville OH, US
Thomas Devan - Westlake OH, US
Assignee:
ADVANCED CERAMICS CORPORATION
International Classification:
B32B009/00
US Classification:
428/216000, 428/336000, 428/704000, 428/698000, 428/408000
Abstract:
A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 2 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0.1 micron to 100 microns apart.

Composite Refractory Metal Carbide Coating On A Substrate And Method For Making Thereof

US Patent:
2005006, Mar 24, 2005
Filed:
Jun 24, 2004
Appl. No.:
10/875861
Inventors:
Ajit Sane - Medina OH, US
Jeffrey Lennartz - Cleveland OH, US
Jon Leist - North Olmsted OH, US
Daniel Kotabish - Independence OH, US
John Mariner - Avon Lake OH, US
Andrew Macey - Medina OH, US
Douglas Longworth - Brecksville OH, US
Timothy Hejl - Independence OH, US
Thomas Devan - Westlake OH, US
International Classification:
B05D007/22
B32B009/00
US Classification:
428698000, 427230000, 428209000, 428408000
Abstract:
A composite coating for use on semi-conductor processing components, comprising a refractory metal carbide coating with its surface modified by at least one of: a) a carbon donor source for a stabilized stoichiometry, and b) a layer of nitride, carbonitride or oxynitride of elements selected from a group B, Al, Si, refractory metals, transition metals, rare earth metals which may or may not contain electrically conducting pattern, and wherein the metal carbide is selected from the group consisting of silicon carbide, tantalum carbide, titanium carbide, tungsten carbide, silicon oxycarbide, zirconium carbide, hafnium carbide, lanthanum carbide, vanadium carbide, niobium carbide, magnesium carbide, chromium carbide, molybdenum carbide, beryllium carbide and mixtures thereof. The composite coating is characterized as having an improved corrosion resistance property and little emissivity sensitivity to wavelengths used in optical pyrometry under the normal semi-conductor processing environments.

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