Thomas M Ference, Age 576237 S Applecross Rd, Cleveland, OH 44143

6426241, Jul 30, 2002

Nov 12, 1999

09/439112

Steven A. Cordes - Cortlandt Manor NY
Peter A. Gruber - Mohegan Lake NY
James L. Speidell - Poughquag NY
Wayne J. Howell - Williston VT
Thomas G. Ference - Essex Junction VT

International Business Machines Corporation - Armonk NY

H01L 2144

438108, 438124, 438126, 438127, 438637

A method for forming three-dimensional circuitization in a substrate is provided for forming conductive traces and via contacts. In the method, a substrate formed of a substantially insulating material is first provided, grooves and apertures in a top surface of and through the substrate are then formed, followed by filling the grooves and apertures with an electrically conductive material such as a solder. The method can be carried out at a low cost to produce high quality circuit substrates by utilizing an injection molded solder technique or a molten solder screening technique to fill the grooves and the apertures. The grooves and the apertures in the substrate may be formed by a variety of techniques such as chemical etching, physical machining and hot stamping.

6521977, Feb 18, 2003

Jan 21, 2000

09/489277

Jay Burnham - E. Fairfield VT
Eduard A. Cartier - New York NY
Thomas G. Ference - Essex Junction VT
Steven W. Mittl - Essex VT
Anthony K. Stamper - Williston VT

International Business Machines Corporation - Armonk NY

H01L 2358

257649, 257640, 257618, 257622, 257629, 257774, 257761, 438 98, 438162, 438240, 438407, 438683, 438686, 438624, 438625, 438589, 438618, 438622, 438627, 438629, 438637, 438648, 438650, 438675

Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation purposes. The on-board deuterium reservoirs are in the form of plugs which extend through an insulating layer and a deuterium barrier layer to the semiconductor substrate, and are preferably positioned in contact with a shallow trench oxide which will allow diffusion of deuterium to the semiconductor devices. The deuterium ingress paths extend through thin film layers from the top or through the silicon substrate. The latter include shallow trench isolations formed in a semiconductor substrate which are adjacent and connected to semiconductor devices formed in the semiconductor substrate, and where the back portion of the semiconductor substrate has been polished or ground down to the bottom of the shallow trench isolation, thereby allowing deuterium, during an anneal, to diffuse from the back through the shallow trench isolation to the semiconductor devices in the semiconductor substrate.

6770501, Aug 3, 2004

Oct 23, 2002

10/277835

Jay Burnham - E. Fairfield VT
Eduard A. Cartier - New York NY
Thomas G. Ference - Essex Junction VT
Steven W. Mittl - Essex VT
Anthony K. Stamper - Williston VT

International Business Machines Corporation - Armonk NY

H01L 213205

438 38, 438588, 438587, 438585, 438627, 438643

Semiconductor structures are provided with on-board deuterium reservoirs or with deuterium ingress paths which allow for diffusion of deuterium to semiconductor device regions for passivation purposes. The on-board deuterium reservoirs are in the form of plugs which extend through an insulating layer and a deuterium barrier layer to the semiconductor substrate, and are preferably positioned in contact with a shallow trench oxide which will allow diffusion of deuterium to the semiconductor devices. The deuterium ingress paths extend through thin film layers from the top or through the silicon substrate. The latter include shallow trench isolations formed in a semiconductor substrate which are adjacent and connected to semiconductor devices formed in the semiconductor substrate, and where the back portion of the semiconductor substrate has been polished or ground down to the bottom of the shallow trench isolation, thereby allowing deuterium, during an anneal, to diffuse from the back through the shallow trench isolation to the semiconductor devices in the semiconductor substrate.

2002011, Aug 22, 2002

Apr 24, 2002

10/131803

Steven Cordes - Cortlandt Manor NY, US
Peter Gruber - Mohegan Lake NY, US
James Speidell - Poughquag NY, US
Wayne Howell - Williston VT, US
Thomas Ference - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

H01L021/44
H01L023/48
H01L029/40
H01L023/52

257/784000, 438/617000, 438/614000, 257/781000, 257/786000

A method for forming three-dimensional circuitization in a substrate is provided for forming conductive traces and via contacts. In the method, a substrate formed of a substantially insulating material is first provided, grooves and apertures in a top surface of and through the substrate are then formed, followed by filling the grooves and apertures with an electrically conductive material such as a solder. The method can be carried out at a low cost to produce high quality circuit substrates by utilizing an injection molded solder technique or a molten solder screening technique to fill the grooves and the apertures. The grooves and the apertures in the substrate may be formed by a variety of techniques such as chemical etching, physical machining and hot stamping.

6231333, May 15, 2001

Aug 24, 1995

8/518874

Peter Alfred Gruber - Mohegan Lake NY
Egon Max Kummer - Croton-on-Hudson NY
Bernie Hernandez - Norwalk CT
Thomas George Ference - Essex Junction VT
Arthur Richard Zingher - White Plains NY

International Business Machines Corporation - Armonk NY

B29C 3500

425546

An apparatus and method utilize vacuum injected molding of a liquid in a plurality of mold cells for solidification therein. An injection head includes spaced apart vacuum and injection slots positionable atop a mold plate in flow communication with the mold cells therein. Relative axial sliding is effected between the injection head and the mold plate for sequentially evacuating gas from the mold cells using a continuous vacuum followed in turn by sequentially injecting into the evacuated mold cells the liquid from a continuous source thereof. Sliding of the injection head over the mold plate automatically provides self valving for sequentially evacuating and filling the mold cells from the same side of the mold plate. In a preferred embodiment, the vacuum and injection slots are linked together at the mold plate so that surface tension of the liquid restrains flow of the liquid from the injection slot to the vacuum slot while allowing gas flow therebetween for effecting the vacuum in the mold cells.