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Thomas E Wallner, Age 69208 End Ave, Island Heights, NJ 08732

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Known as:
Thomase Wallner
Related to:
Brianne Wallner Cheryl A Randazzo 53

Thomas Wallner Phones & Addresses

208 End Ave, Island Hgts, NJ 08732 (732) 581-7964

267 End Ave, Island Heights, NJ 08732

108 End Ave, Toms River, NJ 08753

208 End Ave, Toms River, NJ 08753

Seaside Park, NJ

Edison, NJ

Work

Company: Leisure village west Sep 2006 Position: Service manager

Education

School / High School: Rutgers University- Newark, NJ May 1981 Specialities: BA in Business Administration

Mentions for Thomas E Wallner

Thomas Wallner resumes & CV records

Resumes

Thomas Wallner Photo 36

Thomas Wallner - Ship Bottom, NJ

Work:
Leisure Village West Sep 2006 to 2000
Service Manager Action Mailers - Ramsey, NJ Sep 2005 to Sep 2006
Sales Executive Fleming Peoria Company - Ramsey, NJ May 1996 to Aug 2005
Vice President of Sales American Lung Association - New York, NY Jun 1986 to May 1996
Director of Supply Service Sears, Roebuck & Co - Yorktown Heights, NY Sep 1983 to Jun 1986
Area Manager
Education:
Rutgers University - Newark, NJ May 1981
BA in Business Administration

Publications & IP owners

Us Patents

Complementary Metal-Oxide-Semiconductor Device With Embedded Stressor

US Patent:
2009024, Oct 1, 2009
Filed:
Mar 25, 2008
Appl. No.:
12/054933
Inventors:
KEVIN K. CHAN - Staten Island NY, US
Jack O. Chu - Manhasset Hills NY, US
Jin-Ping Han - Fishkill NY, US
Thomas S. Kanarsky - Hopewell Junction NY, US
Hung Y. Ng - New Milford NJ, US
Qiqing Quyang - Yorktown Heights NY, US
Gen Pei - Mahopac NY, US
Chun-Yung Sung - Poughkeepsie NY, US
Henry K. Utomo - Newburgh NY, US
Thomas A. Wallner - Pleasant Valley NY, US
International Classification:
H01L 29/78
H01L 21/336
US Classification:
257351, 438163, 438154, 257E29295, 257E21409
Abstract:
In one embodiment, the invention is a complementary metal-oxide-semiconductor device with an embedded stressor. One embodiment of a field effect transistor includes a silicon on insulator channel, a gate electrode coupled to the silicon on insulator channel, and a stressor embedded in the silicon on insulator channel and spaced laterally from the gate electrode, where the stressor is formed of a silicon germanide alloy whose germanium content gradually increases in one direction.

Possible Relatives

Daniel Wallner  Denise B Wallner  Dave A Wallner  Frank E Wallner  Heidi L Wallner  James M Wallner  Jennifer Wallner  Thomas E Stamps  Thomas R Stanberry  Thomas T Stancil 

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