Thomas E Wallner, Age 64208 End Ave, Island Heights, NJ 08732

Thomas Wallner Phones & Addresses

208 End Ave, Island Hgts, NJ 08732

208 End Ave, Island Heights, NJ 08732

208 W End Ave, Island Heights, NJ 08732

267 End Ave, Island Heights, NJ 08732

Edison, NJ

108 End Ave, Toms River, NJ 08753

108 End Ave, Toms River, NJ 08753

208 End Ave, Toms River, NJ 08753

208 End Ave, Toms River, NJ 08753

Seaside Park, NJ

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Work

Company: Leisure village west Sep 2006 Position: Service manager

Education

School / High School: Rutgers University- Newark, NJ May 1981 Specialities: BA in Business Administration

Mentions for Thomas E Wallner

Resumes

Resumes

Thomas Wallner Photo 1

Thomas Wallner - Ship Bottom, NJ

Work:
Leisure Village West Sep 2006 to 2000
Service Manager
Action Mailers - Ramsey, NJ Sep 2005 to Sep 2006
Sales Executive
Fleming Peoria Company - Ramsey, NJ May 1996 to Aug 2005
Vice President of Sales
American Lung Association - New York, NY Jun 1986 to May 1996
Director of Supply Service
Sears, Roebuck & Co - Yorktown Heights, NY Sep 1983 to Jun 1986
Area Manager
Education:
Rutgers University - Newark, NJ May 1981
BA in Business Administration

Publications

Us Patents

Complementary Metal-Oxide-Semiconductor Device With Embedded Stressor

US Patent:
2009024, Oct 1, 2009
Filed:
Mar 25, 2008
Appl. No.:
12/054933
Inventors:
KEVIN K. CHAN - Staten Island NY,
Jack O. Chu - Manhasset Hills NY,
Jin-Ping Han - Fishkill NY,
Thomas S. Kanarsky - Hopewell Junction NY,
Hung Y. Ng - New Milford NJ,
Qiqing Quyang - Yorktown Heights NY,
Gen Pei - Mahopac NY,
Chun-Yung Sung - Poughkeepsie NY,
Henry K. Utomo - Newburgh NY,
Thomas A. Wallner - Pleasant Valley NY,
International Classification:
H01L 29/78
H01L 21/336
US Classification:
257351, 438163, 438154, 257E29295, 257E21409
Abstract:
In one embodiment, the invention is a complementary metal-oxide-semiconductor device with an embedded stressor. One embodiment of a field effect transistor includes a silicon on insulator channel, a gate electrode coupled to the silicon on insulator channel, and a stressor embedded in the silicon on insulator channel and spaced laterally from the gate electrode, where the stressor is formed of a silicon germanide alloy whose germanium content gradually increases in one direction.

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