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Ting Chien
Location:
United States
Ting Chien
Location:
United States
Ting L ChienSan Jose, CA
Ting Chien Phones & Addresses
San Jose, CA
Mentions for Ting L Chien
Publications & IP owners
Us Patents
Plasma Etching Of Dielectric Layer With Selectivity To Stop Layer
US Patent:
2002014, Oct 3, 2002
Filed:
Mar 30, 2001
Appl. No.:
09/820692
Inventors:
Ting Chien - Cupertino CA, US
Christine Nelson - Santa Clara CA, US
Douglas Keil - Fremont CA, US
Christine Nelson - Santa Clara CA, US
Douglas Keil - Fremont CA, US
International Classification:
H01L021/302
H01L021/461
H01L021/461
US Classification:
438/710000
Abstract:
A semiconductor manufacturing process wherein a dielectric layer is plasma etched with selectivity to an underlying and/or overlying stop layer such as a silicon nitride layer. The etchant gas includes a hydrogen-free fluorocarbon reactant such as CFgas wherein y/x 1.5, an oxygen-containing gas such as Oand a carrier gas such as Ar. The etch rate of the dielectric layer can be at least 10 times higher than that of the stop layer. Using a combination of CF, Oand Ar, it is possible to obtain dielectric: nitride etch selectivity of greater than 30:1 and nitride cornering etch selectivity of greater than 20:1. The process is useful for etching vias, contacts, and/or trenches of a self-aligned contact (SAC) or self-aligned trench.
Post Etch Photoresist Strip With Hydrogen For Organosilicate Glass Low- Etch Applications
US Patent:
6426304, Jul 30, 2002
Filed:
Jun 30, 2000
Appl. No.:
09/608251
Inventors:
Ting Chien - Cupertino CA
Janet M. Flanner - Union City CA
Ian Morey - Singapore, SG
Janet M. Flanner - Union City CA
Ian Morey - Singapore, SG
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21302
US Classification:
438727, 438725
Abstract:
Method for stripping photoresist from a semiconductor wafer including a layer of organosilicate dielectric. The method introduces a flow of hydrogen-containing gas to the wafer, and uses the hydrogen-containing gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to strip at least a portion of the photoresist from the wafer. Where the stripping of the photoresist from the semiconductor wafer is performed subsequent to an etching step performed on the wafer in an etch apparatus, the present invention in turn enables the stripping of the photoresist in situ within the etch apparatus. A surprising result of the present invention is that dramatically elevated concentrations of hydrogen gas not only enable high throughput strip rates, but that the utilization of these highly concentrated hydrogen gas mixtures can be performed in safety.
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