Vikram P Doshi, Age 7117112 Northfield Ln, Huntington Beach, CA 92647

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17112 Northfield Ln, Huntingtn Bch, CA 92647 (714) 847-3593

7661 Yukon Dr, Huntington Beach, CA 92648

San Francisco, CA

1415 W Dogwood Ave, Anaheim, CA 92801

Forest Park, IL

Buena Park, CA

Orange, CA

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Us Patents

Method Of Etching Etch-Resistant Materials

US Patent:
4713145, Dec 15, 1987
Filed:
Dec 19, 1986
Appl. No.:
6/943683
Inventors:
Vikram N. Doshi - Costa Mesa CA
Assignee:
Gulton Industries, Inc. - Costa Mesa CA
International Classification:
B44C 122
C23F 100
US Classification:
156667
Abstract:
A method for etching sapphire and other etch-resistant materials is disclosed. The method consists of preparing a hot, precipitated-gel form of phosphoric acid solution and immersing the item to be etched in the hot, precipitated-gel. The gel is prepared by heating a liquid phosphoric acid solution, causing water contained in the solution to evaporate. As the water evaporates, the solution thickens and eventually attains the precipitated-gel state. The etching rate of a sapphire wafer immersed in the gel is on the order of 10-50 microns per hour, depending on the depth of immersion, the orientation of the wafer and the temperature of the gel.

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