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Heng Xin Wu, Age 668614 53Rd Ave, Elmhurst, NY 11373

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Known as:
Heng Jin Wu Heng X Wu Heng Zin Wu Xin H Wu Xin Wu Heng Hengjin Wu Jin Wu Heng
Related to:
Zi Yan Wu 62

Heng Wu Phones & Addresses

8614 53Rd Ave, Elmhurst, NY 11373 (718) 672-1637

Flushing, NY

1365 E 100Th St, Brooklyn, NY 11236 (716) 594-8302

1451 E 100Th St, Brooklyn, NY 11236 (718) 209-6317

Queens, NY

Mentions for Heng Xin Wu

Career records & work history

Medicine Doctors

Heng Wu

Specialties:
Anesthesiology
Work:
Genesis Health GroupGenesis Health Group Anesthesiology
801 Illini Dr, Silvis, IL 61282
(309) 281-4540 (phone) (309) 281-4609 (fax)
Site
Languages:
English
Description:
Dr. Wu works in Silvis, IL and specializes in Anesthesiology. Dr. Wu is affiliated with Genesis Medical Center Silvis.
Heng Wu Photo 1

Heng Wu

Heng Wu resumes & CV records

Resumes

Heng Wu Photo 31

Heng Wu

Heng Wu Photo 32

Heng Wu

Publications & IP owners

Us Patents

Symmetric Read Operation Resistive Random-Access Memory Cell With Bipolar Junction Selector

US Patent:
2022019, Jun 23, 2022
Filed:
Dec 21, 2020
Appl. No.:
17/128352
Inventors:
- Armonk NY, US
Bahman Hekmatshoartabari - White Plains NY, US
Ruilong Xie - Niskayuna NY, US
Heng Wu - Guilderland NY, US
International Classification:
H01L 27/24
H01L 45/00
H01L 29/737
H01L 29/08
H01L 29/10
H01L 29/66
G11C 13/00
Abstract:
A memory device, and a method of making the same, includes a resistive random-access memory element electrically connected to an extrinsic base region of a bipolar junction transistor, the extrinsic base region of the bipolar junction transistor consisting of an epitaxially grown material that forms the bottom electrode of the resistive random-access memory element. Additionally, a method of writing to the memory device includes applying a first voltage on a word line of the memory device to form a filament in the resistive random-access memory element. A second voltage including an opposite polarity to the first voltage can be applied to the word line to remove a portion of the filament in the resistive random-access memory element.

Hybrid Stacked Field Effect Transistors

US Patent:
2023008, Mar 23, 2023
Filed:
Sep 22, 2021
Appl. No.:
17/481504
Inventors:
- Armonk NY, US
Bahman Hekmatshoartabari - White Plains NY, US
Alexander Reznicek - Troy NY, US
Heng Wu - Guilderland NY, US
International Classification:
H01L 27/092
H01L 29/06
H01L 29/423
H01L 29/786
H01L 29/66
H01L 21/8238
Abstract:
A hybrid stacked semiconductor device includes a nanosheet stack on a substrate and an all-around gate. The nanosheet stack includes a first stack portion and a second stack portion. The first stack portion includes first channels. The second stack portion is stacked on the first stack portion, and includes second channels. The all-around gate includes a first gate portion that wraps around the first channels and a second gate portion that wraps around the second channels. A first gate extension contacts the first gate portion and the second gate extension contacts the second gate portion. At least one gate contact contacts the first gate extension to establish conductivity with the first gate portion and contacts the second gate extension to establish conductivity with the second gate portion.

Possible Relatives

Cynthia Wu  Debby Wu  Dan H Wu  Danny Wu  Dennis D Wu  Dave Wu  Diane C Wu  Heng S Lim  Heng Liu  Heng Sun 

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