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Ying Wu, Age 47212 Whitwell St, Quincy, MA 02169

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Known as:
Ying Zuo Ying Wong Ying Xiang
Related to:
David S Xiong 72 Chi Yung Wong 55

Ying Wu Phones & Addresses

Quincy, MA

San Mateo, CA

Wilmington, MA

Somerville, MA

Burlingame, CA

Cambridge, MA

Malden, MA

Boston, MA

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Work

Company: Utstarcom, inc. Address: 1275 Harbor Bay Pkwy, Alameda, CA 94502 Phones: (510) 864-8800 Position: Vice chairman and executive vice president chairman and chief executive officer uts china Industries: Telephone and Telegraph Apparatus

Mentions for Ying Wu

Career records & work history

Medicine Doctors

Ying Wu Photo 1

Dr. Ying Wu, Boston MA - DDS (Doctor of Dental Surgery)

Specialties:
Oral & Maxillofacial Surgery
Address:
165 Cambridge St Suite 401, Boston, MA 02114
(617) 726-1076 (Phone)
Languages:
English
Ying Wu Photo 2

Ying Wu, Fremont CA

Specialties:
Internal Medicine
Address:
47000 Warm Springs Blvd Suite 2, Fremont, CA 94539
Languages:
English
Ying Wu Photo 3

Ying Wu

Ying Wu Photo 4

Ying Yih Wu

Specialties:
General Practice
Surgery
Education:
(1969)

License Records

Ying Wu

Licenses:
License #: 24763 - Expired
Issued Date: Apr 19, 2007
Expiration Date: Jun 30, 2010
Type: Certified Public Accountant

Ying Wu resumes & CV records

Resumes

Ying Wu Photo 40

Ying Wu - Athens, GA

Work:
University of Georgia Jan 2010 to 2000
Procurement Specialist NEO GROUP - Cambridge, MA Jan 2008 to Jan 2010
Corporate Development Manager (Leave Reason: Family Relocation) IRVING OIL - Portsmouth, NH 2007 to 2008
Financial Analyst Babson MCFE Project (Leave Reason: Project Completed) FIDELITY INVESTMENT INC. - Boston, MA 2006 to 2007
Strategy Consultant Babson Consulting Alliance Program (Leave Reason: Project Completed) Zhongshan Universal Enterprise at ALIAXIS GROUP - Guangdong, China 2001 to 2005
Senior Marketing and Sales Manager (Leave Reason: Relocated to US) SHANGHAI POLARBEAR STATIONARY ADHESIVE TAPE CO., LTD 1996 to 2001
Product Marketing Manager (Leave Reason: Career Development)
Education:
BABSON COLLEGE, F.W. OLIN GRADUATE SCHOOL OF BUSINESS - Wellesley, MA 2006 to 2008
MBA in Marketing, Finance
Skills:
Proficient on MS SQL Server [] Bilingual, native Chinese speaker (Mandarin, Cantonese, and Shanghai dialect) and fluent in English; SPSS; Expert on Excel, PowerPoint, Word, Access
Ying Wu Photo 41

Ying Wu - Hayward, CA

Work:
Triangle Coatings, Inc 2006 to 2000 Potter Learning Center - San Leandro, CA 2004 to 2005
Bookkeeper Qingsong Limited Liability Company 1997 to 2003
Financial Manager Accountant Clerk 1996 to 1997 Mechanical Engineer 1987 to 1996
Education:
Chabot College - Hayward, CA 2008
Associate of Science in Accounting Southern China Physics University 1987
Associate of Arts in Mechanical Engineering
Ying Wu Photo 42

Ying Wu - Fremont, CA

Work:
Synnex Corporation Feb 2013 to 2000
SUPPLY CHAIN PLANNER III Hydrofarm, Inc - Petaluma, CA Dec 2010 to Apr 2012
PLANNER/ BUYER Integral Financial, LLC - San Jose, CA Feb 2010 to Nov 2010
FINANCIAL ADVISER Ping An Insurance (Group) Company of China - Shenyang Jun 2005 to Jun 2007
HUMAN RESOURCE MANAGER Ping An Insurance (Group) Company of China - Shenyang Jun 2004 to Jun 2005
Marketing Planner
Education:
Northwestern Polytechnic University-Fremont CA - Fremont, CA 2008 to 2009
MBA Shenyang University of Technology - Shenyang, CN 2000 to 2004
Bachelor of Science
Ying Wu Photo 43

Ying Wu - Waltham, MA

Work:
Brandeis International Journal, Brandeis University Apr 2011 to 2000
Art Director The Boston Globe - Boston, MA Nov 2010 to Apr 2011
iPad tester Brandeis University - Waltham, MA 2009 to Sep 2010
Teaching Assistant WCAC-TV - Boston, MA Mar 2010 to May 2010
News Video Production Intern Boston World Partnerships - Boston, MA 2009 to 2009
Public Relationship Intern Beijing News Oct 2003 to Aug 2008
Associate Art Director
Education:
Brandeis University - Waltham, MA 2008 to 2010
Master of Arts in Cultural Production (Vision/Media/Sign) Beijing Institute of Fashion Technology 1999 to 2003
B.F.A. in Graphic Design
Skills:
Photoshop CS5, Illustrator CS5, IndesignCS5, Acrobat CS5, Final Cut Pro 7.0

Publications & IP owners

Us Patents

Method And Apparatus For Differentiated Communication Channel Robustness In A Multi-Tone Transceiver

US Patent:
7881362, Feb 1, 2011
Filed:
Sep 15, 2007
Appl. No.:
11/901346
Inventors:
Avadhani Shridhar - Santa Clara CA, US
Sam Heidari - Menlo Park CA, US
Rouben Toumani - San Jose CA, US
Ying Wu - Cupertino CA, US
Assignee:
Ikanos Communications, Inc. - Fremont CA
International Classification:
H04B 1/38
US Classification:
375219, 375260
Abstract:
A multi-tone transceiver including: a channel controller and a plurality of components forming a transmit path and a receive path. The channel controller configured to determine bit-loading for each successive symbol or tone set based on a 1noise margin target for a first subset of tones in each tone set dedicated to transport of a robust communications channel (RCC) and based on a 2noise margin target less than the 1noise margin target for remaining tones in each tone set dedicated to a standard communications channel (SCC). The plurality of components forming the transmit and receive paths are responsive to the channel controller to select for data modulated on a given tone at least one of smaller constellations and higher gain scaling levels when the given tone corresponds to an RCC tone as compared to an SCC tone, whereby the first set of tones dedicated to the RCC exhibit greater immunity to noise variations than the remaining tones dedicated to the SCC.

Powered Grid For Plasma Chamber

US Patent:
2012032, Dec 20, 2012
Filed:
Jun 15, 2011
Appl. No.:
13/161372
Inventors:
Maolin Long - Cupertino CA, US
Alex Paterson - San Jose CA, US
Richard Marsh - San Ramon CA, US
Ying Wu - Dublin CA, US
International Classification:
H01L 21/3065
C23F 1/08
US Classification:
438710, 15634535, 257E21218
Abstract:
A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Faraday Shield Having Plasma Density Decoupling Structure Between Tcp Coil Zones

US Patent:
2013018, Jul 25, 2013
Filed:
Oct 23, 2012
Appl. No.:
13/658652
Inventors:
Maolin Long - Cupertino CA, US
Alex Paterson - San Jose CA, US
Ricky Marsh - San Ramon CA, US
Ying Wu - Dublin CA, US
John Drewery - Santa Clara CA, US
International Classification:
H01L 21/67
H05K 9/00
US Classification:
15634549, 15634551, 15634548, 174377
Abstract:
A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.

Asynchronous Input And Output For Snapshots Of Virtual Machines

US Patent:
2022033, Oct 20, 2022
Filed:
Jul 5, 2022
Appl. No.:
17/857667
Inventors:
- Palo Alto CA, US
Li Ding - Cupertino CA, US
Linglin Yu - Sunnyvale CA, US
Stephen Chu - San Francisco CA, US
Ying Wu - Palo Alto CA, US
International Classification:
G06F 9/455
Abstract:
A data management system comprises: a storage appliance configured to store a snapshot of a virtual machine; and one or more processors in communication with the storage appliance. The one or more processors are configured to perform operations including: identifying a plurality of shards of the virtual machine; requesting a snapshot of each of the plurality of shards; receiving the shards asynchronously; ordering the received snapshot shards sequentially into a results queue; and storing a single snapshot of the virtual machine based on the ordered snapshot shards. Operations may further include maintaining a flow control queue that limits the number of snapshot shards requested.

Etching Isolation Features And Dense Features Within A Substrate

US Patent:
2022031, Oct 6, 2022
Filed:
Jun 23, 2022
Appl. No.:
17/847971
Inventors:
- Fremont CA, US
Alexander Miller Paterson - San Jose CA, US
Ying Wu - Livermore CA, US
International Classification:
H01L 21/3065
H01J 37/305
H01J 37/32
Abstract:
Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

Rf Pulsing Within Pulsing For Semiconductor Rf Plasma Processing

US Patent:
2022025, Aug 11, 2022
Filed:
Apr 26, 2022
Appl. No.:
17/729451
Inventors:
- Fremont CA, US
Yuhou Wang - Fremont CA, US
Ying Wu - Livermore CA, US
Alex Paterson - San Jose CA, US
International Classification:
H01J 37/32
H03K 4/92
Abstract:
A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

Multi-Level Parameter And Frequency Pulsing With A Low Angular Spread

US Patent:
2023000, Jan 5, 2023
Filed:
Sep 9, 2022
Appl. No.:
17/942040
Inventors:
- Fremont CA, US
Alex Paterson - San Jose CA, US
Ying Wu - Livermore CA, US
International Classification:
H01J 37/32
Abstract:
Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

Etching Isolation Features And Dense Features Within A Substrate

US Patent:
2021035, Nov 18, 2021
Filed:
Nov 22, 2019
Appl. No.:
17/298931
Inventors:
- Fremont CA, US
Alexander Miller Paterson - San Jose CA, US
Ying Wu - Livermore CA, US
International Classification:
H01L 21/3065
H01J 37/32
H01J 37/305
Abstract:
Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

Isbn (Books And Publications)

An Analysis Of Credit And Equilibrium Credit Rationing

Author:
Ying Wu
ISBN #:
0815316836

Do-It-Yourself Feng Shui: Take Charge Of Your Destiny!

Author:
Ying Wu
ISBN #:
1901881350

Face Reading

Author:
Ying Wu
ISBN #:
1901881873

Possible Relatives

Cynthia Wu  Debby Wu  Dan H Wu  Danny Wu  Dennis D Wu  Dave Wu  Diane C Wu  Ying B Mei  Ying J Kuo  Ying L Meng 

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