David K Tsang, Age ~52Hollister, CA

David Tsang Phones & Addresses

Hollister, CA

770 Sweeny St, San Francisco, CA 94134

517 9Th St, San Jose, CA 95112

908 Walnut Dr, Farmington, NM 87401

Santa Clara, CA

Foster City, CA

Santa Cruz, CA

Massena, NY

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Work

Company: Kyt corp Address: 1475 Huntington Ave # A, South San Francisco, CA 94080 Position: Owner Industries: Gift, Novelty, and Souvenir Shops

Languages

English

Mentions for David K Tsang

Professional Records

Medicine Doctors

David Tsang Photo 1

David W Tsang, Daly City CA

Specialties:
Acupuncture
Address:
128 Woodrow St, Daly City, CA 94014
Languages:
English

Resumes

Resumes

David Tsang Photo 2

Passionate About Emerging Markets &Amp; Go To Market Strategy

Position:
Director, Things TBD at Salesforce.com
Location:
San Francisco Bay Area
Industry:
Computer Software
Work:
Salesforce.com - San Francisco since Jun 2013
Director, Things TBD
Edgespring May 2012 - Jun 2013
Director of Sales & Marketing Engineering
Hewlett-Packard - San Francisco Bay Area Oct 2011 - Jun 2012
Solutions Architect & West Region Sales, Smart Marketing Suite
Eloqua - San Francisco Bay Area Jan 2008 - Sep 2011
Senior Sales Consultant, Strategic Accounts
Endeca Jul 2007 - Jan 2008
Solutions Engineer, Special Operations (Marketing)
Qualcomm 2004 - 2005
Firmware Engineer
Education:
University of Waterloo 2005 - 2011
Masters, Management Sciences
University of Waterloo 2000 - 2005
Bachelor of Applied Science, Computer Engineering
Skills:
Solution Selling, Solution Architecture, Digital Marketing, Marketing Automation, Business Intelligence, CRM, System Architecture, Business, Data Architecture, Revenue Analysis, Core Java, SaaS, Enterprise Software, Cloud Computing, Salesforce.com, Sales Enablement, Marketing Strategy, Sales Management, Demand Generation, Analytics, Sales Process, B2B Marketing
Interests:
Sales strategy, professional networking, organizational development, management training, international business
Languages:
Chinese (Cantonese)
David Tsang Photo 3

Fixed Income Sales

Position:
Fixed Income Sales at Wells Fargo
Location:
San Francisco Bay Area
Industry:
Financial Services
Work:
Wells Fargo since Sep 2007
Fixed Income Sales
Smith Barney Apr 2007 - Sep 2007
Client Associate
Merrill Lynch May 2006 - Apr 2007
401k Plan Specialist
Education:
The University of Connecticut 2000 - 2004
Cresskill high school
New York University
Skills:
Mutual Funds, Series 63, Bloomberg, Series 7, Portfolio Management, Bonds, Fixed Income, Securities
David Tsang Photo 4

David Tsang

Location:
San Francisco Bay Area
Industry:
Airlines/Aviation
Skills:
Advanced Manuever and Upset Recovery Training, International Flight Operations to Asia and Europe with multiple oceanic crossings, Emergency Procedures Training
Interests:
general aviation flying, motorcycles (sportbikes, sport-touring, road racing especially MotoGP, World Super Bike), bicycling and European road racing especially the Tour de France, skiing.
David Tsang Photo 5

David Tsang

Location:
United States
David Tsang Photo 6

David Tsang

Location:
United States

Business Records

Name / TitleCompany / ClassificationPhones & Addresses
David Tsang
Owner
KYT Corp
Gift, Novelty, and Souvenir Shops
1475 Huntington Ave # A, South San Francisco, CA 94080
Website: globaltradecorp.com
David Tsang
CTO
Acorn Campus
Loan Brokers
3 Results Way, Cupertino, CA 95014
David Tsang
CEO
Starport Foods
Food Preparations
1250 - 29Th Avenuue, San Francisco, CA 94122
David Tsang
Owner
KYT Corp
Home furnishings
1475 Huntington Ave Ste A, South San Francisco, CA 94080
David Tsang
Director
Optovue, Inc 45531 Northport Loop W, Fremont, CA 94538
(510) 623-8868
David Tsang Le Krewe Restaurant Group, LLC 1250 29 Ave, San Francisco, CA 94122
1250-29TH Avenue, San Francisco, CA 94122
David D. Tsang Northcoast Group, LLC 2 Embarcadero Ctr, San Francisco, CA 94111
25558 Crestfield Dr, Hayward, CA 94552
David D. Tsang Acorn Angels 2000, LLC 27101 Horseshoe Ln, Los Altos, CA 94022

Publications

Us Patents

Mram Cells Having Magnetic Write Lines With A Stable Magnetic State At The End Regions

US Patent:
6812538, Nov 2, 2004
Filed:
Sep 23, 2003
Appl. No.:
10/669216
Inventors:
David Tsang - Cupertino CA
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
H01L 2982
US Classification:
257421, 257E27006, 257295
Abstract:
A method and system for providing and using a magnetic memory are disclosed. The magnetic memory includes a plurality of magnetic memory cells, a plurality of magnetic write lines and a plurality of magnetic biasing structures. The plurality of magnetic write lines have a plurality of end regions. The plurality of magnetic biasing structures coupled to the plurality of end regions of the plurality of magnetic write lines.

High Density And High Programming Efficiency Mram Design

US Patent:
6864551, Mar 8, 2005
Filed:
Jun 26, 2003
Appl. No.:
10/606612
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
H01L029/82
H01L043/00
US Classification:
257421, 257295, 257E27006
Abstract:
A method and system for providing a magnetic memory is disclosed. The magnetic memory includes a magnetic element. The magnetic element is written using a first write line and a second write line and resides at an intersection between the first and second write lines. The second write line is oriented at an angle to the first write line. The second write line has a top and at least one side. At least a portion of the second write line is covered by an insulating layer. A magnetic layer covers a portion of the insulating layer. The portion of the insulating layer resides between the magnetic layer and the second write line. The magnetic layer includes a soft magnetic material.

Mram Array With Segmented Magnetic Write Lines

US Patent:
6870759, Mar 22, 2005
Filed:
Aug 21, 2003
Appl. No.:
10/646455
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
G11C011/02
US Classification:
365158, 365 63
Abstract:
A magnetic random access memory (MRAM) array and method for making the MRAM array are disclosed. The MRAM array includes magnetic storage cells, global word lines, magnetic word lines, read bit lines, selection devices, and write bit lines. Each magnetic word line has segments. Each segment is coupled with the global word line(s) such that each segment is separately selectable. Each segment is also coupled to a portion of the magnetic storage cells. The read bit lines are oriented at an angle with respect to the magnetic word lines. The read bit lines are coupled with the magnetic cells through the selection devices. The write bit lines are substantially parallel to the read bit lines. Preferably, the magnetic word lines include soft magnetic materials and are coupled to each magnetic storage cell through a thin, nonmagnetic layer. To reduce interference from currents in global word lines, the global word lines are also substantially parallel to the magnetic word lines.

Method And System For Performing Readout Utilizing A Self Reference Scheme

US Patent:
6870760, Mar 22, 2005
Filed:
Oct 16, 2003
Appl. No.:
10/688290
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
G11C011/00
US Classification:
365158, 365 50
Abstract:
A method and system for reading a magnetic memory including a plurality of magnetic elements is disclosed. The method and system include determining a first resistance of at least one of the plurality of magnetic elements. The method and system also include applying a disturb magnetic field to the magnetic element(s) and determining a second resistance of the magnetic element(s) while the disturb magnetic field is applied. The method and system further include comparing the first resistance to the second resistance. Consequently, the state(s) of the magnetic element(s) can be determined without the use of a separate reference element.

Mram Memories Utilizing Magnetic Write Lines

US Patent:
6909630, Jun 21, 2005
Filed:
Jun 11, 2003
Appl. No.:
10/459133
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
G11C007/00
US Classification:
365158, 365171
Abstract:
A method and system for providing and using a magnetic random access memory are disclosed. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write lines. At least one of the plurality of magnetic lines and at least one of the second plurality of write lines each carrying a current for writing to at least one of the plurality of magnetic memory cells. Preferably, the plurality of magnetic write lines have soft magnetic properties and are preferably magnetic bit lines. For magnetic tunneling junction stacks within the magnetic memory cells, the magnetic bit lines are preferably significantly thicker than and closely spaced to the free layers of the magnetic memory cells.

Mram Architecture With A Flux Closed Data Storage Layer

US Patent:
6909633, Jun 21, 2005
Filed:
Oct 16, 2003
Appl. No.:
10/688664
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
G11C011/15
US Classification:
365173, 365171, 365158, 3652255, 365 55, 365 66, 365 87
Abstract:
A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the magnetic memory cells includes a magnetic element having a data storage layer. The data storage layer stores data magnetically. The magnetic write line(s) are magnetostatically coupled with at least the data storage layer of the magnetic element of the corresponding magnetic memory cells. Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells.

Method And System For Providing A Magnetic Memory Having A Wrapped Write Line

US Patent:
6933550, Aug 23, 2005
Filed:
Feb 17, 2004
Appl. No.:
10/781478
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
H01L031/119
G11C007/02
US Classification:
257295, 257443, 365209, 365 66, 365 74, 365 97
Abstract:
A method and system for providing magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory elements and providing at least one wrapped write line. Each wrapped write line includes a bottom write line and a top write line electrically connected to the bottom write line. The bottom write line resides below a portion of the plurality of magnetic elements, while the top write resides above the portion of the plurality of magnetic elements. The bottom write line carries a first current in a first direction, while the top write line carries a second current in a second direction opposite to the first direction.

Mram Array With Segmented Word And Bit Lines

US Patent:
6940749, Sep 6, 2005
Filed:
Sep 23, 2003
Appl. No.:
10/669481
Inventors:
David Tsang - Cupertino CA,
Assignee:
Applied Spintronics Technology, Inc. - Milpitas CA
International Classification:
G11C011/14
US Classification:
365171, 365173
Abstract:
A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the word line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line segments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices.

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