David Kawing Tsang, Age 551220 Bonnie View Dr, Hollister, CA 95023

6812538, Nov 2, 2004

Sep 23, 2003

10/669216

David Tsang - Cupertino CA

Applied Spintronics Technology, Inc. - Milpitas CA

H01L 2982

257421, 257E27006, 257295

A method and system for providing and using a magnetic memory are disclosed. The magnetic memory includes a plurality of magnetic memory cells, a plurality of magnetic write lines and a plurality of magnetic biasing structures. The plurality of magnetic write lines have a plurality of end regions. The plurality of magnetic biasing structures coupled to the plurality of end regions of the plurality of magnetic write lines.

6864551, Mar 8, 2005

Jun 26, 2003

10/606612

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

H01L029/82
H01L043/00

257421, 257295, 257E27006

A method and system for providing a magnetic memory is disclosed. The magnetic memory includes a magnetic element. The magnetic element is written using a first write line and a second write line and resides at an intersection between the first and second write lines. The second write line is oriented at an angle to the first write line. The second write line has a top and at least one side. At least a portion of the second write line is covered by an insulating layer. A magnetic layer covers a portion of the insulating layer. The portion of the insulating layer resides between the magnetic layer and the second write line. The magnetic layer includes a soft magnetic material.

6870759, Mar 22, 2005

Aug 21, 2003

10/646455

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

G11C011/02

365158, 365 63

A magnetic random access memory (MRAM) array and method for making the MRAM array are disclosed. The MRAM array includes magnetic storage cells, global word lines, magnetic word lines, read bit lines, selection devices, and write bit lines. Each magnetic word line has segments. Each segment is coupled with the global word line(s) such that each segment is separately selectable. Each segment is also coupled to a portion of the magnetic storage cells. The read bit lines are oriented at an angle with respect to the magnetic word lines. The read bit lines are coupled with the magnetic cells through the selection devices. The write bit lines are substantially parallel to the read bit lines. Preferably, the magnetic word lines include soft magnetic materials and are coupled to each magnetic storage cell through a thin, nonmagnetic layer. To reduce interference from currents in global word lines, the global word lines are also substantially parallel to the magnetic word lines.

6870760, Mar 22, 2005

Oct 16, 2003

10/688290

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

G11C011/00

365158, 365 50

A method and system for reading a magnetic memory including a plurality of magnetic elements is disclosed. The method and system include determining a first resistance of at least one of the plurality of magnetic elements. The method and system also include applying a disturb magnetic field to the magnetic element(s) and determining a second resistance of the magnetic element(s) while the disturb magnetic field is applied. The method and system further include comparing the first resistance to the second resistance. Consequently, the state(s) of the magnetic element(s) can be determined without the use of a separate reference element.

6909630, Jun 21, 2005

Jun 11, 2003

10/459133

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

G11C007/00

365158, 365171

A method and system for providing and using a magnetic random access memory are disclosed. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write lines. At least one of the plurality of magnetic lines and at least one of the second plurality of write lines each carrying a current for writing to at least one of the plurality of magnetic memory cells. Preferably, the plurality of magnetic write lines have soft magnetic properties and are preferably magnetic bit lines. For magnetic tunneling junction stacks within the magnetic memory cells, the magnetic bit lines are preferably significantly thicker than and closely spaced to the free layers of the magnetic memory cells.

6909633, Jun 21, 2005

Oct 16, 2003

10/688664

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

G11C011/15

365173, 365171, 365158, 3652255, 365 55, 365 66, 365 87

A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the magnetic memory cells includes a magnetic element having a data storage layer. The data storage layer stores data magnetically. The magnetic write line(s) are magnetostatically coupled with at least the data storage layer of the magnetic element of the corresponding magnetic memory cells. Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells.

6933550, Aug 23, 2005

Feb 17, 2004

10/781478

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

H01L031/119
G11C007/02

257295, 257443, 365209, 365 66, 365 74, 365 97

A method and system for providing magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory elements and providing at least one wrapped write line. Each wrapped write line includes a bottom write line and a top write line electrically connected to the bottom write line. The bottom write line resides below a portion of the plurality of magnetic elements, while the top write resides above the portion of the plurality of magnetic elements. The bottom write line carries a first current in a first direction, while the top write line carries a second current in a second direction opposite to the first direction.

6940749, Sep 6, 2005

Sep 23, 2003

10/669481

David Tsang - Cupertino CA, US

Applied Spintronics Technology, Inc. - Milpitas CA

G11C011/14

365171, 365173

A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the word line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line segments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices.