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Andy P Lyle, Age 412494 E Brierfield Dr, Eagle, ID 83616

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Known as:
Andrew P Lyle
Related to:
Jerry Lyle Tyler Langedyke

Andy Lyle Phones & Addresses

Eagle, ID

New Meadows, ID

Boise, ID

Minneapolis, MN

Tuscaloosa, AL

Northport, AL

Moscow, ID

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Mentions for Andy P Lyle

Andy Lyle resumes & CV records

Resumes

Andy Lyle Photo 32

It Risk Manager At Pricewaterhousecoopers

Position:
It Risk Manager at Zilor
Location:
Région de New York City , États-Unis
Industry:
Computer & Network Security
Work:
Zilor
It Risk Manager I.B.M
Security Operations Manager zenith 2002 - 2007
It security Manager
Education:
The University of Connecticut
M.S.C., Computer Science
Andy Lyle Photo 33

Andy Lyle

Location:
United States
Andy Lyle Photo 34

Andy Lyle

Location:
United States

Publications & IP owners

Us Patents

Semiconductor Devices With Magnetic And Attracter Materials And Methods Of Fabrication

US Patent:
2017035, Dec 14, 2017
Filed:
Aug 29, 2017
Appl. No.:
15/690013
Inventors:
- Boise ID, US
Andy Lyle - Boise ID, US
Witold Kula - Gilroy CA, US
International Classification:
H01L 43/12
H01L 43/08
H01L 43/10
Abstract:
A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Semiconductor Devices With Magnetic Regions And Attracter Material And Methods Of Fabrication

US Patent:
2017020, Jul 13, 2017
Filed:
Mar 24, 2017
Appl. No.:
15/468225
Inventors:
- Boise ID, US
Andy Lyle - Boise ID, US
Witold Kula - Gilroy CA, US
International Classification:
H01L 43/12
H01L 43/08
H01L 43/10
Abstract:
A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Memory Cells, Methods Of Fabrication, And Semiconductor Devices

US Patent:
2015007, Mar 19, 2015
Filed:
Sep 18, 2013
Appl. No.:
14/030763
Inventors:
- Boise ID, US
Andy Lyle - Boise ID, US
Witold Kula - Gilroy CA, US
Assignee:
Micron Technology - Boise ID
International Classification:
H01L 43/10
H01L 43/12
US Classification:
257421, 438 3
Abstract:
A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magneto resistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Possible Relatives

David J Lyle  Dean P Lyle  Debbie Lyle  Deborah Lyle  Dana D Lyle  Daniel E Lyle  Aaron Lyle  Andy Johnson  Andy J Stanek  Andy White 

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