John S Hallock, Age 65133 Leaping Brook Way, Six Mile, SC 29682

6387461, May 14, 2002

May 6, 1999

09/306400

Cynthia Louise Ebner - Greer SC
John Scott Hallock - Potomac MD

Cryovac, Inc. - Duncan SC

B32B 2708

428 357, 428457, 25218828, 2065246

A composition suitable for scavenging oxygen is disclosed which comprises a carrier having a combination of a hydroxosulfitometalate and a transition metal ion source.

6503693, Jan 7, 2003

Dec 2, 1999

09/452878

Robert Douglas Mohondro - Sykesville MD
John Scott Hallock - Potomac MD

Axcelis Technologies, Inc. - Beverly MA

G03C 556

430328, 430311, 430315, 430324, 430325, 430330, 216 49, 438692, 427337

A process for altering exposed and developed photoresist features. The photoresist features are exposed to at least one compound that will react with at least one of itself and at least one component of the photoresist. The reaction takes place in the presence of at least one component of the photoresist. The photoresist features are exposed to reaction-initiating energy during at least one time selected from the group consisting of prior to, simultaneous with and subsequent to exposing the photoresist features to the at least one compound.

6524936, Feb 25, 2003

Dec 22, 2000

09/742721

John Scott Hallock - Potomac MD
Alan Frederick Becknell - Ellicott City MD
Palani Sakthivel - Gaithersburg MD

Axcelis Technologies, Inc. - Beverly MA

H01L 21425

438531, 156345, 156656

A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.

6582891, Jun 24, 2003

Nov 14, 2000

09/712443

John S. Hallock - Potomac MD
Robert D. Mohondro - Sykesville MD

Axcelis Technologies, Inc. - Beverly MA

G03C 500

430330, 430317, 430322, 430313, 430315, 430328, 430311, 427336, 427335, 427337

A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

6709807, Mar 23, 2004

Oct 9, 2002

10/267757

John S. Hallock - Potomac MD
Robert D. Mohondro - Sykesville MD

Axcelis Technologies, Inc. - Beverly MA

G03C 500

430322, 430311, 430328, 430330, 430331, 430313, 4302701, 430967, 430942

A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

6734120, May 11, 2004

Feb 17, 2000

09/505695

Ivan Berry - Ellicott City MD
Stuart Rounds - Frederick MD
John Hallock - Potomac MD
Michael Owens - Austin TX
Mahmoud Dahimene - Sunnyvale CA

Axcelis Technologies, Inc. - Beverly MA

H01L 2131

438906, 438759, 438963

A method of enabling the removal of fluorine containing residue from a semiconductor substrate comprising applying a gas and/or vapor to which the residue is reactive to the residue while the temperature of the substrate is at an elevated level with respect to ambient temperature and the residue is exposed to ultraviolet radiation, for a time period which is sufficient to effect at least one of volatilizing the residue or rendering the residue hydrophilic enough to be removable with deionized water.

2004009, May 27, 2004

Nov 26, 2002

10/065861

Carlo Waldfried - Falls Church VA, US
John Hallock - Potomac MD, US
Ivan Berry - Ellicott City MD, US
Ari Margolis - Hollywood FL, US
Orlando Escorcia - Falls Church VA, US

Axcelis Technologies, Inc. - Beverly MA

C25F001/00

134/001200

A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

5508141, Apr 16, 1996

Dec 2, 1994

8/348674

Daniel J. Hart - Baltimore MD
Alan F. Becknell - Jessup MD
Betsy Elzufon - Owings Mills MD
John S. Hallock - Ellicott City MD
Alan R. Browne - Columbia MD

W. R. Grace & Co.-Conn. - New York NY

G03C 156

430191

A coating of resin and photoactive functionality is autodeposited from an emulsion onto a metallic substrate in order to selectively protect the substrate from corrosive environments such as etchant processes. An acid and oxidizing agent are included in the emulsion so that when the substrate is immersed in the emulsion the resin and photoactive functionality autodeposits. The resulting coating can be exposed to actinic radiation in an image-wise fashion and developed in an alkaline solution to develop the image created. In instances where the emulsion and process are used to make circuit boards, the metallic surface uncovered during developing is then etched away, leaving only the coated sections of the surface. The resulting coated surfaces will be the circuit traces of the circuit board.