John Hudak, Age 65669 Black Hawk Dr NE, Albuquerque, NM 87122

6391744, May 21, 2002

Mar 19, 1997

08/820200

John J. Hudak - Columbia MD
Thomas R. Neal - Catonsville MD
Pramod Chintaman Karulkar - Ellicott City MD

The United States of America as represented by the National Security Agency - Washington DC

H01L 2146

438459, 438149

A method of thinning a non-SOI device using an SOI thinning process that includes the steps of receiving an SOI starting wafer, where the SOI starting wafer includes a silicon substrate and an oxide layer thereon; selecting a non-SOI fabrication process for fabricating the non-SOI device; forming a layer of device quality silicon on the oxide layer of the SOI starting wafer to a sufficient thickness and doping profile to realize the non-SOI device; fabricating the non-SOI device in the device quality silicon layer using the non-SOI fabrication process selected; forming a support layer on the device quality silicon layer having the non-SOI device fabricated therein; and thinning the result of the last step using the SOI thinning process.

4375626, Mar 1, 1983

Jun 22, 1981

6/276143

John J. Hudak - Columbia MD

The United States of America as represented by the National Security
Agency - Washington DC

H03J 320

334 79

A precision linear tuning circuit having particular utility to applications employing superconductors in a supercooled environment. Two capacitors, one fixed and one variable, are connected in parallel by an arrangement of shared, concentric electrodes. The variable capacitor includes one electrode and a movable facing dielectric which are tapered such that displacement of the dielectric results in a linear variation in tuning frequency.