Inventors:
Derick J. Wristers - Bee Caves TX
Jon D. Cheek - Round Rock TX
John G. Pellerin - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
H01L 2976
US Classification:
257330, 257332, 257374, 438270, 438259, 438589
Abstract:
The present invention is directed to a transistor having an enhanced width dimension and a method of making same. In one illustrative embodiment, the transistor comprises a semiconducting substrate, a recessed isolation structure formed in the substrate, the isolation structure defining a recess thereabove, a gate electrode and a gate insulation layer positioned above the substrate, a portion of the gate electrode and the gate insulation layer extending into the recess above the recessed isolation structure, and a source region and a drain region formed in the substrate. In another illustrative embodiment, the transistor comprises a semiconducting substrate, a recessed isolation structure that defines an active area having an upper surface and an exposed sidewall surface, a gate insulation layer and a gate electrode positioned above a portion of the upper surface and a portion of the exposed sidewall surface of the active area, and a source region and a drain region formed in the active area.