Thomas William Orent, Age 783813 Downs Way, Garland, TX 75040

5696619, Dec 9, 1997

Feb 27, 1995

8/395562

Richard L. Knipe - McKinney TX
John H. Tregilgas - Richardson TX
Thomas W. Orent - Garland TX
Hidekazu Yoshihara - Plano TX

Texas Instruments Incorporated - Dallas TX

G02B 2608

359224

An electrically addressable, integrated, monolithic, micromirror device (10) is formed by the utilization of sputtering techniques, including various metal and oxide layers, photoresists, liquid and plasma etching, plasma stripping and related techniques and materials. The device (10) includes a selectively electrostatically deflectable mass or mirror (12) of supported by one or more beams (18) formed by sputtering and selective etching. The beams (18) are improved by being constituted of an impurity laden titanium-tungsten layer (52) with an impurity such as nitrogen, which causes the beams to have lattice constant different from TiW. The improved beams (18) exhibit increased strength, and decreased relaxation and creep.

5942054, Aug 24, 1999

Dec 20, 1996

8/772588

John Harold Tregilgas - Dallas TX
Richard Lee Knipe - McKinney TX
Thomas William Orent - Garland TX
Hidekazu Yoshihara - Tsukuba, JP
Elliott Keith Carpenter - Lewisville TX

Texas Instruments Incorporated - Dallas TX

C22C 4508

148403

An improved elastic member (24) for micromechanical devices (12). The micromechanical device (12) includes a stationary member (28) and a moving member (26) which are connected together by a elastic member (24). Because of repeated and frequent movement of the moving member (26), the elastic member (24) can become permanently flexed or deformed, resulting in poor operation of the device. Aluminum alloys are formed to include oxygen, in combination with nitrogen if desired, to obtain a film with dramatically reduced load relaxation characteristics. Oxygen is added to an Argon sputter gas during deposition, and an amorphous film is produced.

5188970, Feb 23, 1993

Apr 9, 1992

7/865595

Rudy L. York - Plano TX
Joseph D. Luttmer - Richardson TX
Chang F. Wan - Garland TX
Thomas W. Orent - Garland TX
Larry D. Hutchins - Richardson TX
Art Simmons - Anna TX

Texas Instruments Incorporated - Dallas TX

H01L 3118

437 3

Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

5132761, Jul 21, 1992

Oct 1, 1990

7/593363

Rudy L. York - Plano TX
Joseph D. Luttmer - Richardson TX
Chang F. Wan - Garland TX
Thomas W. Orent - Garland TX
Larry D. Hutchins - Richardson TX
Art Simmons - Anna TX

Texas Instruments Incorporated - Dallas TX

H01L 2714
H01L 2348

357 30

Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

5804463, Sep 8, 1998

Dec 31, 1996

8/777861

John H. Tregilgas - Richardson TX
Thomas W. Orent - Garland TX

Raytheon TI Systems, Inc. - Lewisville TX

H01L 3118

438 67

A P-type substrate for infrared photo diodes can be produced by the present invention. A CdZnTe substrate is utilized. A first layer of HgCdTe is formed by liquid phase epitaxy on the substrate. A CdTe passivation layer is formed over the HgCdTe. A ZnS layer is formed over the CdTe layer. A noble metal is introduced into either the CdTe or ZnS layers. During a subsequent baking of the composite, the noble metal diffuses throughout the composite and into the HgCdTe layer.